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BSP130,115

P1-P3P4-P6P7-P9P10-P12P13-P13
2001 Dec 11 3
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSP130
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm
2
.
STATIC CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
SYMBOL PARAMETER VALUE UNIT
R
th j-a
thermal resistance from junction to ambient; note 1 83.3 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
drain-source breakdown voltage I
D
=10µA; V
GS
= 0 300 −−V
I
GSS
gate-source leakage current V
GS
= ±20 V; V
DS
=0 −−±100 nA
V
GSth
gate-source threshold voltage I
D
= 1 mA; V
DS
=V
GS
0.8 − 2V
R
DSon
drain-source on-state resistance I
D
= 20 mA; V
GS
= 2.4 V − 4.8 10 Ω
I
D
= 250 mA; V
GS
=10V − 3.7 6 Ω
I
DSS
drain-source leakage current V
DS
= 240 V; V
GS
=0 −−100 nA
Y
fs
transfer admittance I
D
= 250 mA; V
DS
= 25 V 200 690 − mS
C
iss
input capacitance V
DS
= 25 V; V
GS
= 0; f = 1 MHz − 100 120 pF
C
oss
output capacitance V
DS
= 25 V; V
GS
= 0; f = 1 MHz − 21 30 pF
C
rss
feedback capacitance V
DS
= 25 V; V
GS
= 0; f = 1 MHz − 10 15 pF
Switching times (see Figs 2 and 3)
t
on
turn-on time I
D
= 250 mA; V
DD
=50V;
V
GS
=0to10V
− 610ns
t
off
turn-off time I
D
= 250 mA; V
DD
= 50 V;
V
GS
= 10 to 0 V
− 46 60 ns
2001 Dec 11 4
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSP130
Fig.2 Switching times test circuit.
handbook, halfpage
MBB691
50 Ω
V
DD
= 50 V
I
D
10 V
0 V
Fig.3 Input and output waveforms.
handbook, halfpage
MBB692
10 %
90 %
90 %
10 %
t
on
t
off
OUTPUT
INPUT
Fig.4 Power derating curve.
handbook, halfpage
0 50 100
T
j
(°C)
P
tot
(W)
200
2
1.5
0.5
0
1
150
MRC218
handbook, halfpage
250
010 30
0
20
50
100
150
200
MLD765
V
DS
(V)
C
(pF)
C
rss
C
oss
C
iss
Fig.5 Capacitance as a function of drain-source
voltage; typical values.
V
GS
= 0; f = 1 MHz; T
j
=25°C.
2001 Dec 11 5
Philips Semiconductors Product specification
N-channel enhancement mode
vertical D-MOS transistor
BSP130
handbook, halfpage
0
1.2
0.8
V
DS
(V)
I
D
(A)
0.4
0
4812
MLD766
4 V
3.5 V
3 V
2 V
5 V
2.5 V
V
GS
= 10 V
Fig.6 Typical output characteristics.
T
j
=25°C.
handbook, halfpage
010
1.2
0
0.4
0.8
2
I
D
(A)
V
GS
(V)
468
MLD767
Fig.7 Typical transfer characteristics.
V
DS
= 10 V; T
j
=25°C.
handbook, halfpage
30
10
0
20
MLD768
10
−1
110
I
D
(A)
R
DSon
(Ω)
3 V
3.5 V
4 V
10 V
2.5 V
5 V
V
GS
= 2 V
Fig.8 Drain-source on-state resistance as a
function of drain current; typical values.
T
j
=25°C.
handbook, halfpage
02 10
20
15
5
0
10
4
V
GS
(V)
R
DSon
(Ω)
68
MLD769
Fig.9 Drain-source on-state resistance as a function
of gate-source voltage; typical values.
V
DS
= 100 mV; T
j
=25°C.
P1-P3P4-P6P7-P9P10-P12P13-P13

BSP130,115

Mfr. #:
Buy BSP130,115
Manufacturer:
Nexperia
Description:
MOSFET TAPE-7 MOSFET
Lifecycle:
New from this manufacturer.
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