IRF6620
2 www.irf.com
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 0.16mH,
R
G
= 25Ω, I
AS
= 22A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Surface mounted on 1 in. square Cu board.
Notes:
Used double sided cooling, mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
T
C
measured with thermal couple mounted to top (Drain) of
part.
R
θ
is measured at T
J
of approximately 90°C.
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 20 ––– ––– V
∆ΒV
DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 16 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 2.1 2.7
mΩ
––– 2.8 3.6
V
GS(th)
Gate Threshold Voltage 1.55 ––– 2.45 V
∆V
GS(th)
/∆T
J
Gate Threshold Voltage Coefficient ––– -5.8 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 µA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 110 ––– ––– S
Q
g
Total Gate Charge ––– 28 42
Q
gs1
Pre-Vth Gate-to-Source Charge ––– 9.5 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 3.5 ––– nC
Q
gd
Gate-to-Drain Charge ––– 8.8 –––
Q
godr
Gate Charge Overdrive ––– 6.2 ––– See Fig. 15
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
––– 12 –––
Q
oss
Output Charge ––– 16 ––– nC
t
d(on)
Turn-On Delay Time ––– 18 –––
t
r
Rise Time ––– 80 –––
t
d(off)
Turn-Off Delay Time ––– 20 ––– ns
t
f
Fall Time ––– 6.6 –––
C
iss
Input Capacitance ––– 4130 –––
C
oss
Output Capacitance ––– 1160 ––– pF
C
rss
Reverse Transfer Capacitance ––– 560 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current@ T
C
=25°C
––– ––– 110
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 220
(Body Diode)c
V
SD
Diode Forward Voltage ––– 0.8 1.0 V
t
rr
Reverse Recovery Time ––– 23 35 ns
Q
rr
Reverse Recovery Charge ––– 13 20 nC
I
D
= 22A
V
GS
= 0V
V
DS
= 10V
I
D
= 22A
T
J
= 25°C, I
F
= 22A
di/dt = 100A/µs e
T
J
= 25°C, I
S
= 22A, V
GS
= 0V e
showing the
integral reverse
p-n junction diode.
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 27A e
V
GS
= 4.5V, I
D
= 22A e
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
V
GS
= 4.5V
MOSFET symbol
Clamped Inductive Load
V
DS
= 10V, I
D
= 22A
Conditions
ƒ = 1.0MHz
V
DS
= 10V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5Ve
V
DS
= 10V