OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

APTDF400U120G

P1-P3P4-P4
APTDF400U120G
APTDF400U120G – Rev 2 October, 2012
www.microsemi.com
1-4
Absolute maximum ratings
Symbol Parameter Max ratings Unit
V
R
Maximum DC reverse Voltage
V
RRM
Maximum Peak Repetitive Reverse Voltage
1200 V
T
c
= 25°C 450
I
F(AV)
Maximum Average Forward
Current
Duty cycle = 50%
T
c
= 80°C 400
I
F(RMS)
RMS Forward Current 750
I
FSM
Non-Repetitive Forward Surge Current
T
j
= 25°C
5000
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
All ratings @ T
j
= 25°C unless otherwise specified
V
CES
= 1200V
I
C
= 400A @ Tc = 80°C
Application
Anti-Parallel diode
- Switchmode Power Supply
- Inverters
Snubber diode
Uninterruptible Power Supply (UPS)
Induction heating
Welding equipment
High speed rectifiers
Electric vehicles
Features
Ultra fast recovery times
Soft recovery characteristics
Very low stray inductance
High blocking voltage
High current
Low leakage current
Benefits
Low losses
Low noise switching
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS Compliant
Single diode
Power Module
APTDF400U120G
APTDF400U120G – Rev 2 October, 2012
www.microsemi.com
2-4
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
I
F
= 500A 2.5
I
F
= 1000A 2.5
V
F
Diode Forward Voltage
I
F
= 500A T
j
= 150°C 2.0
V
T
j
= 25°C 2500
I
RM
Maximum Reverse Leakage Current V
R
= 1200V
T
j
= 125°C 5000
µA
C
T
Junction Capacitance V
R
= 200V 600 pF
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
t
rr1
I
F
=1A,V
R
=30V
di/dt = 15A/µs
T
j
= 25°C 90
t
rr2
T
j
= 25°C 110
t
rr3
Reverse Recovery Time
I
F
= 500A
V
R
= 650V
di/dt=1000A/µs
T
j
= 100°C 175
ns
t
fr1
T
j
= 25°C 220
t
fr2
Forward Recovery Time
T
j
= 100°C 220
ns
I
RRM1
T
j
= 25°C 70
I
RRM2
Reverse Recovery Current
T
j
= 100°C 120
A
Q
rr1
T
j
= 25°C 10
Q
rr2
Reverse Recovery Charge
T
j
= 100°C 30
µC
V
fr1
T
j
= 25°C 26
V
fr2
Forward Recovery Voltage
T
j
= 100°C 26
V
T
j
= 25°C 1200
d
IM/dt
Rate of Fall of Recovery Current
I
F
= 500A
V
R
= 650V
di/dt=1000A/µs
T
j
= 100°C 800
A/µs
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
R
thJC
Junction to Case Thermal Resistance
0.08 °C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 V
T
J
Operating junction temperature range
-40 150
T
STG
Storage Temperature Range -40 125
T
C
Operating Case Temperature -40 100
°C
To heatsink M5 2.5 3.5
Torque Mounting torque
For terminals M6 3 4
N.m
Wt Package Weight 250 g
APTDF400U120G
APTDF400U120G – Rev 2 October, 2012
www.microsemi.com
3-4
LP4 Package outline (dimensions in mm)
P1-P3P4-P4

APTDF400U120G

Mfr. #:
Buy APTDF400U120G
Manufacturer:
Microchip / Microsemi
Description:
Discrete Semiconductor Modules CC5007
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet