NCS2250SQ2T2G

NCS2250, NCV2250, NCS2252, NCV2252
www.onsemi.com
10
Figure 18 shows the non−inverting configuration. For the
non−inverting configuration, the threshold V
th
set by R
1
and
R
2
is fixed. The output adjusts the input signal on IN+.
Figure 18. Comparator with Hysteresis, Non−Inverting
Configuration
R
F
R
1
R
2
V
IN
+
NCS2250
R
IN
The value of the high−level input voltage which triggers
the output to switch from low to high is given by the
following equation:
V
IN_high
+
V
th
(R
IN
) R
F
)
R
F
(eq. 3)
The value of the low−level input voltage which triggers
the output to switch from high to low is given by the
following equation:
V
IN_low
+
V
th
(R
IN
) R
F
) * R
IN
V
DD
R
F
(eq. 4)
Power dissipation
The absolute maximum junction temperature is 150°C.
The junction temperature can be calculated using the power
dissipation P, thermal resistance q
JA
, and ambient
temperature T
A
.
T
J
+ q
JA
P ) T
A
(eq. 5)
Layout Techniques
High speed layout techniques are recommended for the
best performance.
Bypass capacitors of at least 0.1 mF must be placed as
close as possible to supply pins.
The traces on the input pins should be short to minimize
any noise on the high impedance inputs. In general, shorter
traces will reduce parasitic capacitance, inductance, and
resistance.
Identify and keep sensitive traces away from possible
noise sources such as clocks. Crosstalk can be reduced by
increasing the distance between traces. Do not let traces run
parallel for long distances. Take advantage of routing layers
to separate traces that would otherwise run parallel. Ground
or DC voltage supplies can be used to separate a sensitive
trace from a noise source.
Avoid floating nodes as these will pick up noise.
NCS2250, NCV2250, NCS2252, NCV2252
www.onsemi.com
11
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
DIM
A
MIN MAX MIN MAX
MILLIMETERS
1.80 2.200.071 0.087
INCHES
B 1.15 1.350.045 0.053
C 0.80 1.100.031 0.043
D 0.10 0.300.004 0.012
G 0.65 BSC0.026 BSC
H --- 0.10---0.004
J 0.10 0.250.004 0.010
K 0.10 0.300.004 0.012
N 0.20 REF0.008 REF
S 2.00 2.200.079 0.087
B0.2 (0.008)
MM
12 3
45
A
G
S
D
5 PL
H
C
N
J
K
−B−
SC−88A (SC−70−5/SOT−353)
CASE 419A−02
ISSUE L
ǒ
mm
inches
Ǔ
SCALE 20:1
0.65
0.025
0.65
0.025
0.50
0.0197
0.40
0.0157
1.9
0.0748
SOLDER FOOTPRINT
NCS2250, NCV2250, NCS2252, NCV2252
www.onsemi.com
12
TSOP−5 / (SOT23−5)
CASE 483
ISSUE M
0.7
0.028
1.0
0.039
ǒ
mm
inches
Ǔ
SCALE 10:1
0.95
0.037
2.4
0.094
1.9
0.074
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT
EXCEED 0.15 PER SIDE. DIMENSION A.
5. OPTIONAL CONSTRUCTION: AN ADDITIONAL
TRIMMED LEAD IS ALLOWED IN THIS LOCATION.
TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2
FROM BODY.
DIM MIN MAX
MILLIMETERS
A
B
C 0.90 1.10
D 0.25 0.50
G 0.95 BSC
H 0.01 0.10
J 0.10 0.26
K 0.20 0.60
M 0 10
S 2.50 3.00
123
54
S
A
G
B
D
H
C
J
__
0.20
5X
C AB
T0.10
2X
2X
T0.20
NOTE 5
C
SEATING
PLANE
0.05
K
M
DETAIL Z
DETAIL Z
TOP VIEW
SIDE VIEW
A
B
END VIEW
1.35 1.65
2.85 3.15
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NSC2250/D
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NCS2250SQ2T2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Analog Comparators SINGLE PUSH-PULL OUTPUT
Lifecycle:
New from this manufacturer.
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