- Patented Trench Schottky technology
- Excellent high temperature stability
- Low forward voltage
- Low power loss/ high efficiency
- High forward surge capability
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
SYMBOL UNIT
V
RRM
V
I
F
= 5A
I
F
= 10A
I
F
= 5A
I
F
= 10A
T
J
= 25°C
μA
T
J
= 125°C
mA
R
θJC
°C/W
T
J
°C
T
STG
°C
Document Number: DS_D1411062 Version: B14
V
F
FEATURES
- Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
0.65
Mounting torque: 0.56 Nm max.
0.56
Note 1: Pulse Test with Pulse Width=300μs, 1% Duty Cycle
- 55 to +150Storage temperature range
- 55 to +150Operating junction temperature range
2.5
500-
T
J
= 125°C V
F
0.49
0.79
-
-
-0.58
I
R
TYPICAL APPLICATIONS
Trench Schottky barrier rectifier are designed for high frequency
miniature switched mode power supplies such as adapters, lighting
and on-board DC/DC converters.
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Polarity: As marked
Maximum repetitive peak reverse voltage
Instantaneous reverse current per diode at 100V
T
J
= 25°C
-
Instantaneous forward voltage per diode
( Note1 )
Min.
0.68
PARAMETER
TYP.
20
I
FSM
10
MAX.
A
PARAMETER
Weight: 1.88 g (approximately)
Maximum average forward rectified
current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
per diode
150
Typical thermal resistance per diode
254-
VV
-
-
-
TST20U100C
Taiwan Semiconductor
A
I
F(AV)
per device
Dual High-Voltage Trench Schottky Rectifier
TO-220AB
TST20U100C
100