PS9307AL, PS9307AL2
R08DS0122EJ0100 Rev.1.00 Page 8 of 18
May 16, 2014
TYPICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise specified)
25 50 75 100 150
125
0
300
250
200
150
100
50
25 50 75 100 150
125
0
V
CC
= 30 V,
V
EE
= GND,
V
th
= 5 V
−50 −25 100 12550 75025 150
1
0
023
35
30
25
20
15
10
5
50
40
30
20
10
1.0
0.01
0.1
1
10
100
3
2
1
0
1.2 1.4 1.6 1.8 2.0 2.2 2.4
T
A
= 125°C
100°C
85°C
50°C
25°C
−20°C
−40°C
0 −2 −4 −6 −10−8
2.0
0.0
0.5
1.0
1.5
I
FLH
I
FHL
V
CC
= 30 V,
V
EE
= GND
V
CC
= 30 V,
V
EE
= GND,
I
F
= 10 mA
DETECTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Detector Power Dissipation P
C
(mW
DIODE POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Ambient Temperature T
A
(°C)
Diode Power Dissipation P
D
(mW)
Ambient Temperature T
A
(°C)
FORWARD CURRENT vs.
FORWARD VOLTAGE
Forward Current I
F
(mA)
Forward Voltage V
F
(V)
THRESHOLD INPUT CURRENT vs.
AMBIENT TEMPERATURE
Threshold Input Current I
FLH
/ I
FHL
(mA)
Ambient Temperature T
A
(°C)
OUTPUT VOLTAGE vs.
FORWARD CURRENT
Output Voltage V
O
(V)
Forward Current I
F
(mA)
HIGH LEVEL OUTPUT CURRENT vs. HIGH LEVEL
OUTPUT VOLTAGE – SUPPLY VOLTAGE
High Level Output Current I
OH
(A)
High Level Output Voltage – Supply
Voltage V
OH
– V
CC
(V)
Remark The graphs indicate nominal characteristics.