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2DB1188Q-13

P1-P3P4-P6P7-P7
2DB1188P/Q/R
Document number: DS31144 Rev. 7 - 2
4 of 7
www.diodes.com
February 2013
© Diodes Incorporated
2DB1188P/Q/
R
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
BV
CBO
-40
V
I
C
= -100µA, I
E
= 0
Collector-Emitter Breakdown Voltage
BV
CEO
-32
V
I
C
= -10mA, I
B
= 0
Emitter-Base Breakdown Voltage
BV
EBO
-6
V
I
E
= -100µA, I
C
= 0
Collector Cutoff Current
I
CBO
-100 nA
V
CB
= -20V, I
E
= 0
Emitter Cutoff Current
I
EBO
-100 nA
V
EB
= - 5V, I
C
= 0
ON CHARACTERISTICS (Note 7)
Collector-Emitter Saturation Voltage
V
CE
(
sat
)
-0.35 -0.8 V
I
C
= -2A, I
B
= -0.2A
DC Current Gain
2DB1188P
h
FE
82
180
V
CE
= -3V, I
C
= -0.5A
2DB1188Q 120 270
2DB1188R 180 390
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
f
T
120
MHz
V
CE
= -5V, I
C
= -0.1A,
f = 30MHz
Output Capacitance
C
obo
20
pF
V
CB
= -10V, f = 1MHz
Notes: 7. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
012 3 45
-V , COLLECTOR EMITTER VOLTAGE (V)
CE
Figure 1. Typical Collector Current
vs. Collector-Emitter Voltage
-I ,
C
O
LLE
C
T
O
R
C
U
R
R
E
N
T
(A)
C
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
I = -2mA
B
I = -4mA
B
I = -6mA
B
I = -8mA
B
I = -10mA
B
0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
C
Figure 2. Typical DC Current Gain
vs. Collector Current (2DB1188Q)
h, D
C
C
U
R
R
EN
T
G
AIN
FE
0
50
100
150
200
250
300
350
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
V = -3V
CE
0.0001 0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
C
Figure 3. Typical Collector-Emitter Saturation Voltage
vs. Collector Current
-V ,
C
O
LLE
C
T
O
R
EMI
T
T
E
R
SATURATION VOLTAGE (V)
CE(SAT)
0
0.1
0.2
0.3
0.4
0.5
0.6
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
I/I = 10
CB
0
0.2
0.4
0.6
0.8
1.0
1.2
0.0001 0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
C
Figure 4. Typical Base-Emitter Turn-On Voltage
vs. Collector Current
-V , BASE EMI
T
T
E
R
T
U
R
N-
O
N V
O
L
T
A
G
E (V)
BE(ON)
T = 85°C
A
T = 150°C
A
T = -55°C
A
T = 25°C
A
V = -3V
CE
2DB1188P/Q/R
Document number: DS31144 Rev. 7 - 2
5 of 7
www.diodes.com
February 2013
© Diodes Incorporated
2DB1188P/Q/
R
0
0.2
0.4
0.6
0.8
1.0
1.2
0.0001 0.001 0.01 0.1 1 10
-I , COLLECTOR CURRENT (A)
C
Figure 5. Typical Base-Emitter Saturation Voltage
vs. Collector Current
-V , BASE EMI
T
T
E
R
SA
T
U
R
A
T
I
O
N V
O
L
T
A
G
E(V)
BE(SAT)
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 150°C
A
I/I = 10
CB
0.01 0.1 1 10 100
V , REVERSE VOLTAGE (V)
R
Figure 6. Typical Output Capacitance Characteristics
C
,
O
U
T
P
U
T
C
A
P
A
C
I
T
AN
C
E (pF)
obo
0
10
20
30
40
50
60
f = 1MHz
0
20
40
60
80
100
120
140
0 102030405060708090100
I , Emitter Current (mA)
E
Figure 7. Typical Gain-Bandwidth Product vs. Emitter Current
f,
G
AI
N
-BA
N
DWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
2DB1188P/Q/R
Document number: DS31144 Rev. 7 - 2
6 of 7
www.diodes.com
February 2013
© Diodes Incorporated
2DB1188P/Q/
R
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT89
Dim Min Max
A 1.40 1.60
B 0.44 0.62
B1 0.35 0.54
C 0.35 0.44
D 4.40 4.60
D1 1.62 1.83
E 2.29 2.60
e 1.50 Typ
H 3.94 4.25
H1 2.63 2.93
L 0.89 1.20
All Dimensions in mm
Dimensions Value (in mm)
X 0.900
X1 1.733
X2 0.416
Y 1.300
Y1 4.600
Y2 1.475
Y3 0.950
Y4 1.125
C 1.500
E
H
D1
B1
B
e
C
L
A
D
8° (4X)
H
R
0
.
2
0
0
Y1
X1
Y2
Y
C
X (3x)
Y3
Y4
X2 (2x)
P1-P3P4-P6P7-P7

2DB1188Q-13

Mfr. #:
Buy 2DB1188Q-13
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT 1000W -32Vceo
Lifecycle:
New from this manufacturer.
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