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NSV60601MZ4T1G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 5
1 Publication Order Number:
NSS60601MZ4/D
NSS60601MZ4
60 V, 6.0 A, Low V
CE(sat)
NPN Transistor
ON Semiconductor’s e
2
PowerEdge family of low V
CE(sat)
transistors are surface mount devices featuring ultra low saturation
voltage (V
CE(sat)
) and high current gain capability. These are designed
for use in low voltage, high speed switching applications where
affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e
2
PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
• Complementary to NSS60600MZ4
MAXIMUM RATINGS (T
A
= 25°C)
Rating
Symbol Max Unit
Collector-Emitter Voltage V
CEO
60 Vdc
Collector-Base Voltage V
CBO
100 Vdc
Emitter-Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
6.0 A
Collector Current − Peak I
CM
12.0 A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
60 VOLTS, 6.0 AMPS
2.0 WATTS
NPN LOW V
CE(sat)
TRANSISTOR
EQUIVALENT R
DS(on)
50 mW
SOT−223
CASE 318E
STYLE 1
MARKING DIAGRAM
Schematic
C 2, 4
B 1 E 3
PIN ASSIGNMENT
1
60601G
AYW
A = Assembly Location
Y = Year
W = Work Week
60601 = Specific Device Code
G = Pb−Free Package
Top View Pinout
C
CEB
4
123
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
1
2
3
4
NSS60601MZ4
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
(Note 1)
800
6.5
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
(Note 1)
155 °C/W
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
(Note 2)
2
15.6
W
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
(Note 2)
64
°C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
P
Dsingle
(Note 3) 710
mW
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
1. FR−4 @ 7.6 mm
2
, 1 oz. copper traces.
2. FR−4 @ 645 mm
2
, 1 oz. copper traces.
3. Thermal response.
ORDERING INFORMATION
Device Package Shipping
†
NSS60601MZ4T1G SOT−223
(Pb−Free)
1,000 / Tape & Reel
NSV60601MZ4T1G* SOT−223
(Pb−Free)
1,000 / Tape & Reel
NSS60601MZ4T3G SOT−223
(Pb−Free)
4,000 / Tape & Reel
NSV60601MZ4T3G* SOT−223
(Pb−Free)
4,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
NSS60601MZ4
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector− Emitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
60 − −
Vdc
Collector− Base Breakdown Voltage
(I
C
= 0.1 mAdc, I
E
= 0)
V
(BR)CBO
100 − −
Vdc
Emitter− Base Breakdown Voltage
(I
E
= 0.1 mAdc, I
C
= 0)
V
(BR)EBO
6.0 − −
Vdc
Collector Cutoff Current
(V
CB
= 100 Vdc, I
E
= 0)
I
CBO
− − 0.1
mAdc
Emitter Cutoff Current
(V
EB
= 6.0 Vdc)
I
EBO
− − 0.1
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 4)
(I
C
= 500 mA, V
CE
= 2.0 V)
(I
C
= 1.0 A, V
CE
= 2.0 V)
(I
C
= 2.0 A, V
CE
= 2.0 V)
(I
C
= 6.0 A, V
CE
= 2.0 V)
h
FE
150
120
100
50
−
−
−
−
−
360
−
−
−
Collector− Emitter Saturation Voltage (Note 4)
(I
C
= 0.1 A, I
B
= 2.0 mA)
(I
C
= 1.0 A, I
B
= 0.100 A)
(I
C
= 2.0 A, I
B
= 0.200 A)
(I
C
= 3.0 A, I
B
= 60 mA)
(I
C
= 6.0 A, I
B
= 0.6 A)
V
CE(sat)
−
−
−
−
−
−
0.045
0.085
−
−
0.040
0.060
0.100
0.220
0.300
V
Base − Emitter Saturation Voltage (Note 4)
(I
C
= 1.0 A, I
B
= 0.1 A)
V
BE(sat)
− − 0.900
V
Base − Emitter Turn−on Voltage (Note 4)
(I
C
= 1.0 A, V
CE
= 2.0 V)
V
BE(on)
− − 0.900
V
Cutoff Frequency
(I
C
= 500 mA, V
CE
= 10 V, f = 1.0 MHz)
f
T
100 − −
MHz
Input Capacitance (V
EB
= 5.0 V, f = 1.0 MHz) Cibo − 400 − pF
Output Capacitance (V
CB
= 10 V, f = 1.0 MHz) Cobo − 37 − pF
SWITCHING CHARACTERISTICS
Delay (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA) t
d
− 85 − ns
Rise (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA) t
r
− 115 − ns
Storage (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA) t
s
− 1350 − ns
Fall (V
CC
= 30 V, I
C
= 750 mA, I
B1
= 15 mA) t
f
− 125 − ns
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
Figure 1. Power Derating
T
J
, TEMPERATURE (°C)
150100755025
0
0.5
1.0
1.5
2.0
2.5
P
D
, POWER DISSIPATION (W)
T
C
125
T
A
P1-P3P4-P6

NSV60601MZ4T1G

Mfr. #:
Buy NSV60601MZ4T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT NPN 60V/6A LOW VCE(SAT)
Lifecycle:
New from this manufacturer.
Delivery:
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