OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

ZTX1055A

P1-P3P4-P4
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries)
Facsimile: (44)161-627 5467
Zetex GmbH Zetex Inc. Zetex (Asia) Ltd. These are supported by
Streitfeldstraße 19 87 Modular Avenue 3510 Metroplaza, Tower 2 agents and distributors in
D-81673 München Commack NY11725 Hing Fong Road, Kwai Fong major countries world-wide
Telefon: (49) 89 45 49 49 0 Telephone: (516) 543-7100 Telephone:(852) 26100 611
Zetex plc 1995
Fax: (49) 89 45 49 49 49 Fax: (516) 864-7630 Fax: (852) 24250 494
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied
or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or
services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any
product or service.
Transient Thermal Resistance
Pulse Width
Derating curve
T -Temperature (°C)
M
a
x
P
ower D
i
ssi
p
ati
on
- (Wa
tt
s)
A
mbi
e
nt
tempe
ratu
re
SPICE PARAMETERS
*ZETEX ZTX1055A Spice model Last revision 25/1/95
*
.MODEL ZTX1055A NPN IS=1.60E-12 NF=1.0 BF=500 IKF=4.0 VAF=120
+ ISE=4.0E-13 NE=1.4 NR=1.0 BR=80 IKR=2.5 VAR=15
+ ISC=5.0E-10 NC=1.7 RB=0.1 RE=0.040 RC=0.030
+ CJC=63.3E-12 CJE=512.6E-12 MJC=0.439 MJE=0.373
+ VJC=0.511 VJE=0.800 TF=700E-12 TR=110E-9
*
1995 ZETEX PLC
The copyright in this model and the design embodied belong to Zetex PLC (Zetex). It is supplied
free of charge by Zetex for the purpose of research and design and may be used or copied intact
(including this notice) for that purpose only. All other rights are reserved. The model is believed
accurate but no condition or warranty as to its merchantability or fitness for purpose is given and
no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.
C
B
E
E-Line
TO92 Compatible
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 3  JANUARY 1995
FEATURES
*V
CEO
=120V
* 3 Amp continuous Current
* 6 Amp pulse Current
* Very Low Saturation Voltage
APPLICATIONS
* Automotive Switching Circuit
* Audio Driver Stages
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
175 V
Collector-Emitter Voltage V
CEO
120 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
6A
Continuous Collector Current I
C
3A
Base Current I
B
500 mA
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature
Range
T
j
:T
stg
-55 to +200 °C
ZTX1055AZTX1055A
ZTX1055AZTX1055A
1mA
1mA
10mA
1mA
100mA 1A 10A
10mA
1mA
100mA 1A 10A
10mA
1mA
100mA 1A 10A
200
400
600
V
=10V
0.2
0.4
0.6
0.8
1.0
0.8
0.6
0.4
0.20.2
0.4
0.6
0.8
1.0
0.8
0.6
0.4
0.2
+25°C
I
/I =20
I
/I =30
I
/I =50
V
=10V
I
/I =20
I
/I =20
10A
1A100mA10mA
10mA 100mA 1A
10A
100V10V
0.1V
1V
10
0.1
0.01
1
I
C
-Collector Current
hFE v IC
VBE(sat) v Ic
V
BE(on) v IC
VCE(sat) v IC
I
C
-Collector Current
VCE(sat) v IC
I
C
-Collector Current
I
C
-Collector Current
Single Pulse Test Tamb=25C
V
CE
- Collector VoltageI
C
-Collector Current
Safe Operating Area
TYPICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
175 280 V
I
C
=100µA
Collector-Emitter
Breakdown Voltage
V
CES
175 280 V
IC=100µA
Collector-Emitter
Breakdown Voltage
V
CEO
120 150 V IC=10mA
Collector-Emitter
Breakdown Voltage
V
CEV
175 280 V
IC=100µA, V
EB
=1V
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5 8.8 V
I
E
=100µA
Collector Cut-Off Current I
CBO
0.3 10 nA V
CB
=130V
Emitter Cut-Off Current I
EBO
0.3 10 nA V
EB
=4V
Collector Emitter Cut-Off
Current
I
CES
0.3 10 nA VCES=130V
Collector-Emitter
Saturation Voltage
V
CE(sat)
22
120
220
50
160
310
mV
mV
mV
I
C
=0.1A, I
B
=5mA*
I
C
=1A, I
B
=20mA*
I
C
=3A, I
B
=150mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
950 1000 mV I
C
=3A, I
B
=150mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
810 900 mV IC=3A, V
CE
=10V*
Static Forward Current
Transfer Ratio
h
FE
275
300
50
400
450
110
15
1200
I
C
=10mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
I
C
=3A, V
CE
=10V*
I
C
=6A, V
CE
=10V*
Transition Frequency f
T
130 MHz I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance C
obo
17 30 pF V
CB
=10V, f=1MHz
Switching Times t
on
90 ns I
C
=1A, I
B
=10mA, V
CC
=50V
t
off
2400 ns
I
C
=1A, I
B
=±10mA,
V
CC
=50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
ZTX1055AZTX1055A
1mA
1mA
10mA
1mA
100mA 1A 10A
10mA
1mA
100mA 1A 10A
10mA
1mA
100mA 1A 10A
200
400
600
V
=10V
0.2
0.4
0.6
0.8
1.0
0.8
0.6
0.4
0.20.2
0.4
0.6
0.8
1.0
0.8
0.6
0.4
0.2
+25°C
I
/I =20
I
/I =30
I
/I =50
V
=10V
I
/I =20
I
/I =20
10A
1A100mA10mA
10mA 100mA 1A
10A
100V10V
0.1V
1V
10
0.1
0.01
1
I
C
-Collector Current
hFE v IC
VBE(sat) v Ic
V
BE(on) v IC
VCE(sat) v IC
I
C
-Collector Current
VCE(sat) v IC
I
C
-Collector Current
I
C
-Collector Current
Single Pulse Test Tamb=25C
V
CE
- Collector VoltageI
C
-Collector Current
Safe Operating Area
TYPICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V
(BR)CBO
175 280 V
I
C
=100µA
Collector-Emitter
Breakdown Voltage
V
CES
175 280 V
IC=100µA
Collector-Emitter
Breakdown Voltage
V
CEO
120 150 V IC=10mA
Collector-Emitter
Breakdown Voltage
V
CEV
175 280 V
IC=100µA, V
EB
=1V
Emitter-Base Breakdown
Voltage
V
(BR)EBO
5 8.8 V
I
E
=100µA
Collector Cut-Off Current I
CBO
0.3 10 nA V
CB
=130V
Emitter Cut-Off Current I
EBO
0.3 10 nA V
EB
=4V
Collector Emitter Cut-Off
Current
I
CES
0.3 10 nA VCES=130V
Collector-Emitter
Saturation Voltage
V
CE(sat)
22
120
220
50
160
310
mV
mV
mV
I
C
=0.1A, I
B
=5mA*
I
C
=1A, I
B
=20mA*
I
C
=3A, I
B
=150mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
950 1000 mV I
C
=3A, I
B
=150mA*
Base-Emitter Turn-On
Voltage
V
BE(on)
810 900 mV IC=3A, V
CE
=10V*
Static Forward Current
Transfer Ratio
h
FE
275
300
50
400
450
110
15
1200
I
C
=10mA, V
CE
=10V*
I
C
=1A, V
CE
=10V*
I
C
=3A, V
CE
=10V*
I
C
=6A, V
CE
=10V*
Transition Frequency f
T
130 MHz I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance C
obo
17 30 pF V
CB
=10V, f=1MHz
Switching Times t
on
90 ns I
C
=1A, I
B
=10mA, V
CC
=50V
t
off
2400 ns
I
C
=1A, I
B
=±10mA,
V
CC
=50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
P1-P3P4-P4

ZTX1055A

Mfr. #:
Buy ZTX1055A
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT NPN High Current
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet