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PS2561L-1-F3-L-A

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter Symbol Ratings Unit
Diode Reverse Voltage VR 6 V
Forward Current (DC) IF 80 mA
Power Dissipation Derating
Δ
PD/°C 1.5 mW/°C
Power Dissipation PD 150 mW
Peak Forward Current
*1
I
FP 1 A
Transistor Collector to Emitter Voltage VCEO 80 V
Emitter to Collector Voltage VECO 7 V
Collector Current IC 50 mA
Power Dissipation Derating
Δ
PC/°C 1.5 mW/°C
Power Dissipation PC 150 mW
Isolation Voltage
*2
BV 5 000 Vr.m.s.
Operating Ambient Temperature TA –55 to +100 °C
Storage Temperature Tstg –55 to +150 °C
*1 PW = 100
μ
s, Duty Cycle = 1%
*2 AC voltage for 1 minute at T
A = 25°C, RH = 60% between input and output
Pins 1-2 shorted together, 3-4 shorted together.
Data Sheet PN10234EJ04V0DS
8
PS2561-1,PS2561L-1,PS2561L1-1,PS2561L2-1
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VF IF = 10 mA 1.17 1.4 V
Reverse Current IR VR = 5 V 5
μ
A
Terminal Capacitance Ct V = 0 V, f = 1.0 MHz 50 pF
Transistor Collector to Emitter Dark
Current
ICEO VCE = 80 V, IF = 0 mA 100 nA
Coupled Current Transfer Ratio
(I
C/IF)
*1
CTR I
F = 5 mA, VCE = 5 V 80 200 400 %
Collector Saturation
Voltage
VCE (sat) IF = 10 mA, IC = 2 mA 0.3 V
Isolation Resistance RI-O VI-O = 1.0 kVDC 10
11
Ω
Isolation Capacitance CI-O V = 0 V, f = 1.0 MHz 0.5 pF
Rise Time
*2
tr VCC = 10 V, IC = 2 mA, RL = 100 Ω 3
μ
s
Fall Time
*2
tf 5
*1 CTR rank
L : 200 to 400 (%)
M : 80 to 240 (%)
D : 100 to 300 (%)
H : 80 to 160 (%)
W : 130 to 260 (%)
*2 Test circuit for switching time
Input
Output
90%
10%
t
r
t
d
t
f
t
s
t
on
t
off
V
CC
V
OUT
R
L
= 100 Ω
50 Ω
I
F
μ
Pulse Input
PW = 100 s
Duty Cycle = 1/10
<R>
Data Sheet PN10234EJ04V0DS
9
PS2561-1,PS2561L-1,PS2561L1-1,PS2561L2-1
TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified)
150
100
50
0255075
100
125 150
1.5 mW/°C
150
100
50
25 50 75 100 125 1500
10 000
100
1 000
100
10
1
7550250–25–50
V
CE
= 80 V
10
1.0
0.80.60.40.20
5
1
0.5
0.1
10 mA
40
1.5 mW/°C
20 mA
50 mA
2 mA
I
F
= 1 mA
5 mA
70
2
60
50
40
30
20
10
0
4
6
810
20 mA
I
F
= 5 mA
10 mA
50 mA
40 V
24 V
10 V
5 V
100
1.51.41.31.21.11.00.90.80.7
50
10
5
1
0.5
0.1
0°C
–25°C
–55°C
+60°C
+25°C
T
A
= +100°C
Diode Power Dissipation PD (mW)
Transistor Power Dissipation P
C (mW)
Ambient Temperature T
A
(°C)
Forward Current IF (mA)
Forward Voltage V
F
(V)
Collector Current IC (mA)
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Dark Current ICEO (nA)
Collector Saturation Voltage V
CE (sat)
(V)
Ambient Temperature T
A
(°C)
Ambient Temperature T
A
(°C)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
Data Sheet PN10234EJ04V0DS
10
PS2561-1,PS2561L-1,PS2561L1-1,PS2561L2-1
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21

PS2561L-1-F3-L-A

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Buy PS2561L-1-F3-L-A
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Description:
Transistor Output Optocouplers BV=5000Vr.m.s 1 Channel
Lifecycle:
New from this manufacturer.
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