2015 Microchip Technology Inc. DS20005410A-page 3
DN2470
1.0 ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
†
Drain-to-source voltage................................................................................................................................................................ BV
DSX
Drain-to-gate voltage....................................................................................................................................................................BV
DGX
Gate-to-source voltage................................................................................................................................................................... ±20V
Operating and storage temperature............................................................................................................................. -55°C to +150°C
Note 1: All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle.
2: Specification is obtained by characterization and is not 100% tested.
† Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at those or any other conditions above those indicated in the
operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods
may affect device reliability.
DC AND AC CHARACTERISTICS
Electrical Specifications: Unless otherwise specified, for all specifications T
A
=T
J
= +25°C
Parameter Symbol Min Typ Max Units Conditions
DC Parameters (Note 1, unless otherwise stated)
Drain-to-source breakdown voltage BV
DSX
700 – – V V
GS
= -5.0V, I
D
= 100µA
Gate-to-source off voltage V
GS(OFF)
-1.5 – -3.5 V V
DS
= 25V, I
D
= 10µA
Change in V
GS(OFF)
with tempera-
ture
V
GS(OFF)
– – -4.5 mV/°C V
DS
= 25V, I
D
= 10µA ((Note 2)
Gate body leakage current I
GSS
– – 100 nA V
GS
= ±20V, V
DS
= 0V
Drain-to-source leakage current I
D(OFF)
––1.0µAV
DS =
BV
DSX
, V
GS
= -10V
––1.0mA
V
DS =
0.8 BV
DSX
,
V
GS
= -10V, T
A
= 125°C ((Note 2)
Saturated drain-to-source current I
DSS
–500 - mAV
GS
= 0V, V
DS
= 25V
Static drain-to-source on-state
resistance
R
DS(ON)
––42 V
GS
= 0V, I
D
= 100mA
Change in R
DS(ON)
with temperature R
DS(ON)
––1.1%/°CV
GS
= 0V, I
D
= 100mA (Note 2)
AC Parameters (Note 2)
Forward transconductance G
FS
100 – – mmho V
DS
= 10V, I
D
= 100mA
Input capacitance C
ISS
– – 540
pF
V
GS
= -10V, V
DS
= 25V,
f = 1.0 MHz
Common source output capaci-
tance
C
OSS
––60
Reverse transfer capacitance C
RSS
––25
Turn-on delay time t
d(ON)
––30
ns
V
DD
= 25V,
I
D
= 100mA,
R
GEN
= 25,
Rise time t
r
––45
Turn-off delay time t
d(OFF)
––45
Fall time t
f
––60
Diode Parameters
Diode forward voltage drop V
SD
––1.8VV
GS
= -5.0V, I
SD
= 200mA (Note 1)
Reverse recovery time t
rr
–800– nsV
GS
= -5.0V, I
SD
= 200mA (Note 2)
