VBT4060C
www.vishay.com
Vishay General Semiconductor
Revision: 15-Nov-17
1
Document Number: 87973
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Dual Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.32 V at I
F
= 5.0 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case: TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: as marked
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
PRIMARY CHARACTERISTICS
Package TO-263AB
I
F(AV)
2 x 20 A
V
RRM
60 V
I
FSM
240 A
V
F
at I
F
= 20 A 0.48 V
T
J
max. 150 °C
Diode variations Common cathode
PIN 1
PIN 2
K
HEATSINK
VBT4060C
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VBT4060C UNIT
Maximum repetitive peak reverse voltage V
RRM
60 V
Maximum average forward rectified current
(fig. 1)
per device
I
F(AV)
40
A
per diode 20
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load
I
FSM
240 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
per diode
(1)
I
F
= 5.0 A
T
A
= 25 °C
V
F
0.43 -
V
I
F
= 10 A 0.48 -
I
F
= 20 A 0.53 0.62
I
F
= 5.0 A
T
A
= 125 °C
0.32 -
I
F
= 10 A 0.39 -
I
F
= 20 A 0.48 0.57
Reverse current per diode
(2)
V
R
= 60 V
T
A
= 25 °C
I
R
-6.0
mA
T
A
= 125 °C 34 190