KSC2710GBU

©2004 Fairchild Semiconductor Corporation Rev. B2, April 2004

KSC2710

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

a

=25°C unless otherwise noted

Electrical Characteristics

T

a

=25°C unless otherwise noted

h

FE

Classification

Symbol Parameter Ratings Units

V

CBO

Collector-Base Voltage 40 V

V

CEO

Collector-Emitter Voltage 20 V

V

EBO

Emitter-Base Voltage 5 V

I

C

Collector Current 500 mA

P

C

Collector Power Dissipation 300 mW

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature -55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

Collector-Base Breakdown Voltage I

C

=100µA, I

E

=0 40 V

BV

CEO

Collector-Emitter Breakdown Voltage I

C

=10mA, I

B

=0 20 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

=100µA, I

C

=0 5 V

I

CBO

Collector Cut-off Current V

CB

=25V, I

E

=0 0.1 µA

I

EBO

Emitter Cut-off Current V

EB

=3V, I

C

=0 0.1 µA

h

FE

DC Current Gain V

CE

=1V, I

C

=0.1A 120 400

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

=0.5A, I

B

=50mA 0.18 0.4 V

Classification Y G

h

FE

120 ~ 240 200 ~ 400

KSC2710

Low Frequency Power Amplifier

• Complement to KSA1150

• Collector Dissipation : P

C

=300mW

1.Emitter 2. Collector 3. Base

TO-92S

1

©2004 Fairchild Semiconductor Corporation

KSC2710

Rev. B2, April 2004

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 4. Base-Emitter On Voltage

Figure 5. Collector Output Capacitance

0246810

0

100

200

300

400

500

I

B

= 1.8mA

I

B

= 0.2mA

I

B

= 0.4mA

I

B

= 2.0mA

I

B

= 1.6mA

I

B

= 1.4mA

I

B

= 1.2mA

I

B

= 1.0mA

I

B

= 0.8mA

I

B

= 0.6mA

I

C

[mA], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

1 10 100 1000

1

10

100

1000

V

CE

=1V

h

FE

, DC CURRENT GAIN

I

C

[mA], COLLECTOR CURRENT

1 10 100 1000

0.01

0.1

1

10

V

CE

(sat)

I

C

=10I

B

V

BE

(sat)

V

BE

(sat), V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[mA], COLLECTOR CURRENT

0.00.20.40.60.81.01.2

0.1

1

10

100

V

CE

= 1V

I

C

[mA], COLLECTOR CURRENT

V

BE

[V], BASE-EMITTER VOLTAGE

110100

1

10

100

f = 1MHz

I

E

=0

C

ob

[pF], CAPACITANCE

V

CB

[V], COLLECTOR BASE VOLTAGE

Package Dimensions

KSC2710

Dimensions in Millimeters

Rev. B2, April 2004©2004 Fairchild Semiconductor Corporation

4.00

±0.20

3.72

±0.20

2.86

±0.20

2.31

±0.20

3.70

±0.20

0.77

±0.10

14.47

±0.30

(1.10)

0.49

±0.10

1.27TYP

[1.27±0.20] [1.27±0.20]

1.27TYP

0.66 MAX.

0.35

+0.10

–0.05

TO-92S

KSC2710GBU

Mfr. #:

Manufacturer:

ON Semiconductor / Fairchild

Description:

Bipolar Transistors - BJT NPN Epitaxial Sil

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet