2SD2150T100S Datasheet 2SD2150T100R, 2SD2150T100S | P1-P3

1/2

www.rohm.com

○

2009.11 - Rev.B

Low Frequency Transistor (20V, 3A)

2SD2150

zFeatures zDimensions(Unit : mm)

1) Low V

CE(sat).

VCE(sat) = 0.2V(Typ.)

（I

C / IB = 2A / 0.1A）

2) Excellent current gain characteristics.

3) Complements the 2SB1424.

zStructure

Epitaxial planar type

NPN silicon transistor

zAbsolute maximum ratings (Ta=25°C)

Parameter

CBO

CEO

EBO

Tstg

40 V

A (DC)

°C

A (Pulse)5

0.5

∗

150

−55 to +150

Symbol Limits Unit

∗

1 Single pulse Pw=10ms

∗

2 Mounted on a 40

0.7mm Ceramic substrate.

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

zElectrical characteristics (Ta=25°C)

Parameter Symbol

CBO

BVCEO

BVEBO

ICBO

IEBO

hFE

VCE(sat)

Cob

Min.

−

120

−

0.2

290

−

0.1

560

0.5

−

C=50

C=1mA

E=50

CB=30V

EB=5V

CE=2V, IC=0.1A

C/IB=2A/0.1A

CE=2V, IE= −0.5A, f=100MHz

CE=10V, IE=0A, f=1MHz

−

∗

MHz

Typ. Max. Unit Conditions

∗

Measured using pulse current.

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

Transition frequency

Output capacitance

2SD2150

(1) Base

(2) Collector

(3) Emitter

ROHM : MPT3

EIAJ : SC-62

−0.1

+0.2

−0.05

+0.1

−0.1

+0.2

−0.1

(3)(2)(1)

1.0±0.2

4.0±0.3

0.5±0.1

2.5

3.0±0.2

1.5±0.1

0.4±0.1

0.5±0.1

0.4±0.1

0.4

1.5

4.5

1.6±0.1

∗

Denotes hFE

Abbreviated symbol:

∗

2/2

www.rohm.com

○

2009.11 - Rev.B

Data Sheet 2SD2150

zPackaging specifications and h

Package

Code T100

1000

Taping

Basic ordering

unit (pieces)

2SD2150

Type

FE values are classified as follows :

Item

180 to 390

270 to 560

zElectrical characteristic curves

COLLECTOR CURRENT : I

(A)

BASE TO EMITTER VOLTAGE : V

(V)

Fig.1 Grounded emitter propagatio

characteristics

0.01

0.02

0.05

0.1

0.2

0.5

0 0.2 0.4 0.6 0.8 1.0 1.2 1

=2V

25°C

−40°C

Ta=100°C

0.4

0.8

1.2

1.6

0 0.2 0.4 0.6 0.8 1.0

COLLECTOR CURRENT : I

(A)

COLLECTOR TO EMITTER VOLTAGE : V

)

Fig.2 Grounded emitter output

characteristics ( )

8mA

6mA

4mA

2mA

20mA

18mA

16mA

14mA

12mA

10mA

Ta=25°C

=0A

012345

COLLECTOR CURRENT : I

(A)

COLLECTOR TO EMITTER VOLTAGE : V

)

Fig.3 Grounded emitter output

characteristics ( )

Ta=25°C

=0A

35mA

30mA

25mA

20mA

15mA

10mA

5mA

40mA

45mA

50mA

100

200

500

1000

2000

5000

2 m 5m 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 1 0

=2V

25°C

−40°C

Ta=100°C

DC CURRENT GAIN : h

COLLECTOR CURRENT : I

(A)

Fig.4 DC current gain vs.

collector current

10m

20m

50m

0.1

0.2

0.5

2m 5m10m20m50m0.1 0.2 0.5 1 2 5 1

COLLECTOR SATURATION VOLTAGE : VCE(sat)

(

COLLECTOR CURRENT : I

(A)

Fig.5 Collector-emitter

saturation voltage vs.

collector current ( )

=10

Ta=100°C

25°C

−40°C

COLLECTOR SATURATION VOLTAGE : VCE(sat)

(

COLLECTOR CURRENT : I

(A)

Fig.6 Collector-emitter

saturation voltage vs.

collector curren ( )

0.01

0.011m 2m 5m 0.020.05

0.02

0.05

0.50.20.1

0.1

0.2

0.5

=20

25°C

−40°C

Ta=100°C

10m

20m

50m

0.1

0.2

0.5

COLLECTOR SATURATION VOLTAGE : VCE(sat)

(

COLLECTOR CURRENT : I

(A)

Fig.7 Collector-emitter

saturation voltage vs.

collector current ( )

2m 5m10m20m50m 0.2 0.5 1 2 5 1

1m 0.1

=50

Ta=100°C

25°C

−40°C

−5−2−1 −10

−20 −50

−100−200−500−10

TRANSITION FREQUENCY : f

(MHz)

EMITTER CURRENT : I

(mA)

Fig.8 Gain bandwidth product vs

emitter current

1000

500

200

100

Ta=25°C

=2V

100

200

500

1000

0.1 0.2 0.5 1 2 5 10 20 5

COLLECTOR OUTPUT CAPACITANCE : C

(pF

)

EMITTER INPUT CAPACITANCE : C

(pF

)

COLLECTOR TO BASE VOLTAGE : V

(V)

EMITTER TO BASE VOLTAGE : V

(V)

Fig.9 Collector output capacitance v

collector-base voltage

Emitter input capacitance vs.

emitter-base voltage

Ta=25°C

f=1MHz

=0A

R0039

www.rohm.com

Notice

ROHM Customer Support System

http://www.rohm.com/contact/

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

Notes

No copying or reproduction of this document, in part or in whole, is permitted without the

consent of ROHM Co.,Ltd.

The content specied herein is subject to change for improvement without notice.

The content specied herein is for the purpose of introducing ROHM's products (hereinafter

"Products"). If you wish to use any such Product, please be sure to refer to the specications,

which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein

illustrate the standard usage and operations of the Products. The peripheral conditions must

be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specied in this document.

However, should you incur any damage arising from any inaccuracy or misprint of such

information, ROHM shall bear no responsibility for such damage.

The technical information specied herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or

implicitly, any license to use or exercise intellectual property or other rights held by ROHM and

other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the

use of such technical information.

The Products specied in this document are intended to be used with general-use electronic

equipment or devices (such as audio visual equipment, ofce-automation equipment, commu-

nication devices, electronic appliances and amusement devices).

The Products specied in this document are not designed to be radiation tolerant.

While ROHM always makes efforts to enhance the quality and reliability of its Products, a

Product may fail or malfunction for a variety of reasons.

Please be sure to implement in your equipment using the Products safety measures to guard

against the possibility of physical injury, re or any other damage caused in the event of the

failure of any Product, such as derating, redundancy, re control and fail-safe designs. ROHM

shall bear no responsibility whatsoever for your use of any Product outside of the prescribed

scope or not in accordance with the instruction manual.

The Products are not designed or manufactured to be used with any equipment, device or

system which requires an extremely high level of reliability the failure or malfunction of which

may result in a direct threat to human life or create a risk of human injury (such as a medical

instrument, transportation equipment, aerospace machinery, nuclear-reactor controller,

fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of

any of the Products for the above special purposes. If a Product is intended to be used for any

such special purpose, please contact a ROHM sales representative before purchasing.

If you intend to export or ship overseas any Product or technology specied herein that may

be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to

obtain a license or permit under the Law.

P1-P3

2SD2150T100S

Mfr. #:

Buy 2SD2150T100S

Manufacturer:

Description:

Bipolar Transistors - BJT NPN 20V 3A

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

2SD2150T100S

2SD2150T100S

Products related to this Datasheet