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WEBSITE: http://www.microsemi.com
165
DESIGN DATA
CASE: DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (R
O
JEC
):
100 ÞC/W maximum at L = 0 inch
THERMAL IMPEDANCE: (Z
O
JX
): 35
ÞC/W maximum
POLARITY: Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Power Derating: 3.33 mW / °C above +50°C
Forward Voltage: @ 200mA: 1.1 Volts maximum
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
MAXIMUM MAXIMUM
TYPE ZENER VOLTAGE DIFFERENTIAL REVERSE
(NOTE 1) RESISTANCE CURRENT
V
Z
@ I
ZT
r
diff
@ I
Z
I
R
@ V
R
VOLTS
mA OHMS mA
µ
A VOLTS
MIN MAX
BZV55 C2V4 2.2 2.6 5 100 5 50 1
BZV55 C2V7 2.5 2.9 5 100 5 20 1
BZV55 C3V0 2.8 3.2 5 95 5 10 1
BZV55 C3V3 3.1 3.5 5 95 5 5 1
BZV55 C3V6 3.4 3.8 5 90 5 5 1
BZV55 C3V9 3.7 4.1 5 90 5 3 1
BZV55 C4V3 4.0 4.6 5 90 5 3 1
BZV55 C4V7 4.4 5.0 5 80 5 3 2
BZV55 C5V1 4.8 5.4 5 60 5 2 2
BZV55 C5V6 5.2 6.0 5 40 5 1 2
BZV55 C6V2 5.8 6.6 5 10 5 3 4
BZV55 C6V8 6.4 7.2 5 15 5 2 4
BZV55 C7V5 7.0 7.9 5 15 5 1 5
BZV55 C8V2 7.7 8.7 5 15 5 .700 5
BZV55 C9V1 8.5 9.6 5 15 5 .500 6
BZV55 C10 9.4 10.6 5 20 5 .200 7
BZV55 C11 10.4 11.6 5 20 5 .100 8
BZV55 C12 11.4 12.7 5 25 5 .100 8
BZV55 C13 12.4 14.1 5 30 5 .100 8
BZV55 C15 13.8 15.6 5 30 5 .050 10.5
BZV55 C16 15.3 17.1 5 40 5 .050 11.2
BZV55 C18 16.8 19.1 5 45 5 .050 12.6
BZV55 C20 18.8 21.2 5 55 5 .050 14.0
BZV55 C22 20.8 23.3 5 55 5 .050 15.4
BZV55 C24 22.8 25.6 5 70 5 .050 16.8
BZV55 C27 25.1 28.9 2 80 2 .050 18.9
BZV55 C30 28.0 32.0 2 80 2 .050 21.0
BZV55 C33 31.0 35.0 2 80 2 .050 23.1
BZV55 C36 34.0 38.0 2 90 2 .050 25.2
BZV55 C39 37.0 41.0 2 130 2 .050 27.3
BZV55 C43 40.0 46.0 2 150 2 .050 30.1
BZV55 C47 44.0 50.0 2 170 2 .050 32.9
BZV55 C51 48.0 54.0 2 180 2 .050 35.7
BZV55 C56 52.0 60.0 2 200 2 .050 39.2
BZV55 C62 58.0 66.0 2 215 2 .050 43.4
BZV55 C68 64.0 72.0 2 240 2 .050 47.6
BZV55 C75 70.0 79.0 2 255 2 .050 52.2
• ZENER DIODES
•LEADLESS PACKAGE FOR SURFACE MOUNT
• DOUBLE PLUG CONSTRUCTION
• METALLURGICALLY BONDED
BZV55 C2V4
thru
BZV55 C75
NOTE 1 Nominal Zener voltage is measured with the device junction in thermal
equilibrium at an ambient temperature of 25°C + 3°C.
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
D 1.60 1.70 0.063 0.067
F 0.41 0.55 0.016 0.022
G 3.30 3.70 .130 .146
G1 2.54 REF. .100 REF.
S 0.03 MIN. .001 MIN.
