OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

TBD62503AFG,EL

P1-P3P4-P6P7-P9P10-P11
TBD62502A series, TBD62503A series
2015-07-24
4
©2015 Toshiba Corporation
Operating Ranges (Ta = −40 to 85 °C)
Characteristics Symbol
Condition Min Typ. Max Unit
Output voltage
V
OUT
―
―
―
50
V
Output
current
PG(Note 1)
I
OUT
1 circuits ON, Ta = 25 °C
0
―
250
mA/ch
t
pw
= 25 ms
7 circuits ON
Ta = 85 °C
T
j
= 120 °C
Duty = 10 %
0
―
250
Duty = 50 % 0 ― 190
FG(Note 2)
1 circuits ON, Ta = 25 °C
0 ― 250
t
pw
= 25 ms
7 circuits ON
Ta = 85 °C
T
j
= 120 °C
Duty = 10 %
0
―
250
Duty = 50 % 0 ― 120
FNG(Note 3)
1 circuits ON, Ta = 25 °C
0 ― 250
t
pw
= 25 ms
7 circuits ON
Ta = 85 °C
T
j
= 120 °C
Duty = 10 %
0
―
250
Duty = 50 % 0 ― 130
FWG(Note 4)
1 circuits ON, Ta = 25 °C
0 ― 250
t
pw
= 25 ms
7 circuits ON
Ta = 85 °C
T
j
= 120 °C
Duty = 10 %
0
―
250
Duty = 50 % 0 ― 170
Input voltage
(Output on)
TBD62502A
series
V
IN
(ON)
I
OUT
= 100 mA or upper, V
OUT
= 2 V
14 ― 25
V
TBD62503A
series
I
OUT
= 100 mA or upper, V
OUT
= 2 V
2.5 ― 25
Input voltage
(Output off)
TBD62502A
series
V
IN
(OFF)
I
OUT
= 100 μA or less, V
OUT
= 2 V 0 ― 7.0
V
TBD62503A
series
I
OUT
= 100 μA or less, V
OUT
= 2 V 0 ― 0.6
Note 1: Device alone.
Note 2: On PCB (Size: 30 mm × 30 mm × 1.6 mm, Cu area: 50%, single-side glass epoxy).
Note 3: On PCB (Size: 50 mm × 50 mm × 1.6 mm, Cu area: 40%, single-side glass epoxy).
Note 4: On PCB (JEDEC 2s2p).
TBD62502A series, TBD62503A series
2015-07-24
5
©2015 Toshiba Corporation
Electrical Characteristics (Ta = 25 °C unless otherwise noted)
Characteristics Symbol
Test
Circuit
Condition Min Typ. Max Unit
Output leakage current I
leak
1
V
OUT
= 50V, Ta = 85 °C
V
IN
= 0 V
― ― 1.0 μA
Output voltage
(Output
ON-resistance)
TBD62502A
series
V
DS
(R
ON)
2
I
OUT
= 200 mA, V
IN
=14 V ―
0.4
(2.0)
0.65
(3.25)
V
(Ω)
I
OUT
= 100 mA, V
IN
=14 V ―
0.2
(2.0)
0.325
(3.25)
TBD62503A
series
I
OUT
= 200 mA, V
IN
=5.0 V ―
0.4
(2.0)
0.65
(3.25)
I
OUT
= 100 mA, V
IN
=5.0 V ―
0.2
(2.0)
0.325
(3.25)
Input current
(Output on)
TBD62502A
series
I
IN
(ON)
3
V
IN
= 14 V ― ― 1.0
mA
TBD62503A
series
V
IN
= 2.5 V ― ― 0.1
Input current(Output off)
I
IN
(OFF)
4 V
IN
= 0 V, Ta = 85°C ― ― 1.0 μA
Input voltage
(Output on)
TBD62502A
series
V
IN
(ON)
5
I
OUT
= 100 mA, V
OUT
= 2 V
― ― 14
V
TBD62503A
series
― ― 2.5
Turn−on delay
t
ON
6
V
OUT
= 50 V
R
L
= 200 Ω
C
L
= 15 pF
―
0.4
―
μs
Turn−off delay t
OFF
― 0.8 ―
TBD62502A series, TBD62503A series
2015-07-24
6
©2015 Toshiba Corporation
Test circuit
1. I
leak
2. V
DS
(R
ON
)
3. I
IN
(ON)
4. I
IN
(OFF)
5. V
IN
(ON)
Test circuit may be simplified for explanatory purpose.
OUTPUT
INPUT
GND
V
OUT
OUTPUT
INPUT
GND
I
OUT
V
IN
V
DS
R
ON
= V
DS
/ I
OUT
I
leak
INPUT
GND
V
IN
I
IN(ON)
INPUT
GND
I
IN(OFF)
OUTPUT
INPUT
GND
I
OUT
V
IN(ON)
V
OUT
OUTPUT
OUTPUT
P1-P3P4-P6P7-P9P10-P11

TBD62503AFG,EL

Mfr. #:
Buy TBD62503AFG,EL
Manufacturer:
Toshiba
Description:
Gate Drivers DMOS Transistor Array 7-CH, 50V/0.5A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet