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NTK3043NT5G

P1-P3P4-P5
Semiconductor Components Industries, LLC, 2013
January, 2013 − Rev. 4
1 Publication Order Number:
NTK3043N/D
NTK3043N
Power MOSFET
20 V, 285 mA, N−Channel with ESD
Protection, SOT−723
Features
Enables High Density PCB Manufacturing
44% Smaller Footprint than SC−89 and 38% Thinner than SC−89
Low Voltage Drive Makes this Device Ideal for Portable Equipment
Low Threshold Levels, V
GS(TH)
< 1.3 V
Low Profile (< 0.5 mm) Allows It to Fit Easily into Extremely Thin
Environments such as Portable Electronics
Operated at Standard Logic Level Gate Drive, Facilitating Future
Migration to Lower Levels Using the Same Basic Topology
These are Pb−Free and Halogen Free Devices
Applications
Interfacing, Switching
High Speed Switching
Cellular Phones, PDAs
MAXIMUM RATINGS (T
J
= 25C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage V
DSS
20 V
Gate−to−Source Voltage V
GS
10 V
Continuous Drain
Current (Note 1)
Steady
State
T
A
= 25C
I
D
255
mA
T
A
= 85C 185
t v 5 s T
A
= 25C 285
Power Dissipation
(Note 1)
Steady
State
T
A
= 25C P
D
440
mW
t v 5 s 545
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25C
I
D
210
mA
T
A
= 85C 155
Power Dissipation
(Note 2)
T
A
= 25C P
D
310
mW
Pulsed Drain Current
t
p
= 10 ms
I
DM
400 mA
Operating Junction and Storage Temperature T
J
, T
STG
−55 to
150
C
Source Current (Body Diode) (Note 2) I
S
286 mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 seconds)
T
L
260 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
V
(BR)DSS
R
DS(on)
TYP I
D
Max
20 V
1.5 W @ 4.5 V
2.4 W @ 2.5 V
285 mA
Device Package Shipping
†
ORDERING INFORMATION
NTK3043NT1G SOT−723* 4000 / Tape & Reel
SOT−723
CASE 631AA
STYLE 5
MARKING
DIAGRAM
Top View
3
12
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
5.1 W @ 1.8 V
KA
1
KA = Device Code
M = Date Code
1 − Gate
2 − Source
3 − Drain
6.8 W @ 1.65 V
NTK3043NT5G SOT−723* 8000 / Tape & Reel
M
*These packages are inherently Pb−Free.
NTK3043N
http://onsemi.com
2
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Unit
Junction−to−Ambient – Steady State (Note 3)
R
q
JA
280
C/W
Junction−to−Ambient – t = 5 s (Note 3)
R
q
JA
228
Junction−to−Ambient – Steady State Minimum Pad (Note 4)
R
q
JA
400
3. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T
J
= 25C unless otherwise specified)
Parameter
Test Condition Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V
GS
= 0 V, I
D
= 100 mA
V
(BR)DSS
20 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
I
D
= 100 mA, Reference to 25C
V
(BR)DSS
/T
J
27
mV/C
Zero Gate Voltage Drain Current V
GS
= 0 V,
V
DS
= 16 V
T
J
= 25C
I
DSS
1
mA
T
J
= 125C 10
Gate−to−Source Leakage Current V
DS
= 0 V, V
GS
= 5 V I
GSS
1
mA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V
GS
= V
DS
, I
D
= 250 mA
V
GS(TH)
0.4 1.3 V
Gate Threshold Temperature Coefficient V
GS(TH)
/T
J
−2.4 mV/C
Drain−to−Source On Resistance
V
GS
= 4.5V, I
D
= 10 mA
R
DS(ON)
1.5 3.4
W
V
GS
= 4.5V, I
D
= 255 mA 1.6 3.8
V
GS
= 2.5 V, I
D
= 1 mA 2.4 4.5
V
GS
= 1.8 V, I
D
= 1 mA 5.1 10
V
GS
= 1.65 V, I
D
= 1 mA 6.8 15
Forward Transconductance V
DS
= 5 V, I
D
= 100 mA g
FS
0.275 S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
V
GS
= 0 V, f = 1 MHz, V
DS
= 10 V
C
ISS
11
pF
Output Capacitance C
OSS
8.3
Reverse Transfer Capacitance C
RSS
2.7
SWITCHING CHARACTERISTICS, VGS= 4.5 V (Note 4)
Turn−On Delay Time
V
GS
= 4.5 V, V
DD
= 5 V, I
D
= 10 mA,
R
G
= 6 W
t
d(ON)
13
ns
Rise Time t
r
15
Turn−Off Delay Time t
d(OFF)
94
Fall Time t
f
55
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V, I
S
= 286 mA
T
J
= 25C
V
SD
0.83 1.2
V
T
J
= 125C 0.69
Reverse Recovery Time
V
GS
= 0 V, V
DD
= 20 V, dISD/dt = 100 A/ms,
I
S
= 286 mA
t
RR
9.1
ns
Charge Time t
a
7.1
Discharge Time t
b
2.0
Reverse Recovery Charge Q
RR
3.7 nC
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%
6. Switching characteristics are independent of operating junction temperatures
NTK3043N
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
T
J
= 125C
0
0.1
1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D,
DRAIN CURRENT (AMPS)
0
Figure 1. On−Region Characteristics
1.5
0.1
0
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
I
D,
DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D,
DRAIN CURRENT (AMPS)
−50 0−25 25
4.0
9.0
2.0
1.0
0
50 150
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (C)
T
J
= 25C
T
J
= −55C
75
T
J
= 25C
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE
T
J
= 25C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
V
GS
= 2.5 V
1
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
15
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
T
J
= 150C
T
J
= 125C
2.0 V
2.2 V
V
GS
= 4.5 V
V
DS
5 V
10
1.4 V
20
V
GS
= 3 V to 10 V
0.2
0.3
125100
2.5
10
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2
3
4
16
1
4
6
2
4
3
5
100
5
35
12
0 0.30.1
3.0
0.2
2
1000
1.6 V
2.5 V
5
8 0.2
0.3
I
D
= 0.255 A
T
J
= 25C
01
10
4
1.8 V
27593
5.0
V
GS
= 2.5 V, I
D
= 10 mA
V
GS
= 4.5 V, I
D
= 10 mA
V
GS
= 1.65 V, I
D
= 1 mA
6.0
7.0
8.0
V
GS
= 1.8 V, I
D
= 10 mA
P1-P3P4-P5

NTK3043NT5G

Mfr. #:
Buy NTK3043NT5G
Manufacturer:
ON Semiconductor
Description:
MOSFET NFET 20V 285MA 3.4
Lifecycle:
New from this manufacturer.
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