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IXFH150N20T

P1-P3P4-P6
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT150N20T
IXFH150N20T
Fig. 7. Input Admittance
0
20
40
60
80
100
120
140
160
180
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
160
180
0 20 40 60 80 100 120 140 160 180 200
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
50
100
150
200
250
300
350
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20 40 60 80 100 120 140 160 180
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 100V
I
D
= 75A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Forward-Bias Safe Operating Area @ T
C
= 25ºC
0.1
1
10
100
1000
1 10 100 1000
V
CE
- Volts
I
C
- Amperes
100µs
1ms
R
DS(on)
Limit
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
10ms
100ms
DC
© 2011 IXYS CORPORATION, All Rights Reserved
IXFT150N20T
IXFH150N20T
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
10
11
12
13
14
15
16
17
18
70 80 90 100 110 120 130 140 150
I
D
- Amperes
t
r
- Nanoseconds
R
G
= 2 , V
GS
= 10V
V
DS
= 100V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
0
40
80
120
160
200
240
2 4 6 8 10 12 14 16 18
R
G
- Ohms
t
r
- Nanoseconds
10
30
50
70
90
110
130
t
d
(
o n
)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 100V
I
D
= 150
A
I
D
= 75
A
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
4
8
12
16
20
24
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
40
45
50
55
60
65
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 2, V
GS
= 10V
V
DS
= 100V
I
D
= 150A
I
D
= 75A
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
11
12
13
14
15
16
17
18
19
70 80 90 100 110 120 130 140 150
I
D
- Amperes
t
f
- Nanoseconds
35
40
45
50
55
60
65
70
75
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off
)
- - - -
R
G
= 2, V
GS
= 10V
V
DS
= 100V
T
J
= 125ºC
T
J
= 25ºC
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
10
11
12
13
14
15
16
17
18
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 2 , V
GS
= 10V
V
DS
= 100V
I
D
= 150
A
I
D
= 75
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
0
40
80
120
160
200
240
2 4 6 8 10 12 14 16 18
R
G
- Ohms
t
f
- Nanoseconds
0
50
100
150
200
250
300
t
d
(
o f f
)
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 100V
I
D
= 75A
I
D
= 150A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT150N20T
IXFH150N20T
IXYS REF: F_150N20T(8G)12-14-11
Fig. 19. Maximum Transient Thermal Impedance
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
P1-P3P4-P6

IXFH150N20T

Mfr. #:
Buy IXFH150N20T
Manufacturer:
Littelfuse
Description:
MOSFET Trench HiperFETs Power MOSFETs
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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