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NTS2101PT1

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 1
1 Publication Order Number:
NTS2101P/D
NTS2101P
Power MOSFET
−8.0 V, −1.4 A, Single P−Channel, SC−70
Features
• Leading Trench Technology for Low R
DS(on)
Extending Battery Life
• −1.8 V Rated for Low Voltage Gate Drive
• SC−70 Surface Mount for Small Footprint (2 x 2 mm)
• Pb−Free Package is Available
Applications
• High Side Load Switch
• Charging Circuit
• Single Cell Battery Applications such as Cell Phones,
Digital Cameras, PDAs, etc.
MAXIMUM RATINGS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Value Units
Drain−to−Source Voltage V
DSS
−8.0 V
Gate−to−Source Voltage V
GS
±8.0 V
Continuous Drain
Current (Note 1)
Stead
y
State
T
A
= 25°C
I
D
−1.4
A
T
A
= 70°C −1.1
t ≤ 5 s T
A
= 25°C −1.5 A
Power Dissipation
(Note 1)
Steady
State
T
A
= 25°C P
D
0.29 W
t ≤ 5 s 0.33 W
Pulsed Drain Current
tp = 10 ms
I
DM
−3.0 A
Operating Junction and Storage Temperature T
J
,
T
STG
−55 to
150
°C
Source Current (Body Diode), Continuous I
S
−0.46 A
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
T
L
260 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Max Units
Junction−to−Ambient – Steady State (Note 1)
R
q
JA
430
°C/W
Junction−to−Ambient − t ≤ 5 s (Note 1)
R
q
JA
375
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
S
G
D
Device Package Shipping
†
ORDERING INFORMATION
NTS2101PT1 SOT−323 3000/Tape & Reel
P−Channel MOSFET
SC−70/SOT−323
CASE 419
STYLE 8
MARKING DIAGRAM &
PIN ASSIGNMENT
2
1
3
http://onsemi.com
V
(BR)DSS
R
DS(on)
Typ I
D
Max
−8.0 V
65 mW @ −4.5 V
78 mW @ −2.5 V
117 mW @ −1.8 V
−1.4 A
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NTS2101PT1G
SOT−323
(Pb−Free)
3000/Tape & Reel
TS M G
G
1
2
3
Gate Source
Drain
TS = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
NTS2101P
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise stated)
Parameter Symbol Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V
(BR)DSS
V
GS
= 0 V, I
D
= −250 mA
−8.0 −20 V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V
(BR)DSS
/T
J
−10 mV/°C
Zero Gate Voltage Drain Current I
DSS
V
GS
= 0 V,
V
DS
= −6.4 V
T
J
= 25°C −1.0 mA
T
J
= 70°C −5.0
Gate−to−Source Leakage Current I
GSS
V
DS
= 0 V, V
GS
= ±8.0 V ±100 nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage V
GS(TH)
V
GS
= V
DS
, I
D
= −250 mA
−0.45 −0.7 V
Negative Threshold
Temperature Coefficient
V
GS(TH)
/T
J
2.6 mV/°C
Drain−to−Source On Resistance R
DS(on)
V
GS
= −4.5 V, I
D
= −1.0 A 65 100
mW
V
GS
= −2.5 V, I
D
= −0.5 A 78 140
V
GS
= −1.8 V, I
D
= −0.3 A 117 210
CHARGES AND CAPACITANCES
Input Capacitance C
ISS
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= −8.0 V
640
pF
Output Capacitance C
OSS
120
Reverse Transfer Capacitance C
RSS
82
Total Gate Charge Q
G(TOT)
V
GS
= −5.0 V, V
DD
= −5.0 V,
I
D
= −1.0 A
6.4
nC
Threshold Gate Charge Q
G(TH)
0.7
Gate−to−Source Charge Q
GS
1.0
Gate−to−Drain Charge Q
GD
1.5
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time t
d(ON)
V
GS
= −4.5 V, V
DD
= −4.0 V,
I
D
= −1.0 A, R
G
= 6.2 W
6.2
ns
Rise Time t
r
15
Turn−Off Delay Time t
d(OFF)
26
Fall Time t
f
18
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage V
SD
V
GS
= 0 V,
I
S
= −0.3 A
T
J
= 25°C −0.62 −1.2
V
T
J
= 125°C −0.51
Reverse Recovery Time t
RR
V
GS
= 0 V, dI
SD
/dt = 100 A/ms,
I
S
= −1.0 A
23.4
ns
Charge Time T
a
7.7
Discharge Time T
b
15.7
Reverse Recovery Charge Q
RR
9.5 nC
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
NTS2101P
http://onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
0
0.04
0.08
0.12
0.16
0 2.0 4.0 6.0 8.
0
−I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
T
J
= 125°C
V
GS
= −2.5 V
T
J
= −55°C
T
J
= 25°C
0
2.0
4.0
6.0
8.0
0 1.0 2.0 3.0 4.0
1000
246
8
0.7
0.9
1.1
1.3
1.5
−50 −25 0 25 50 75 100 125 150
0
0.04
0.08
0.12
0.16
0 2.0 4.0 6.0 8.0
0
2.0
4.0
6.0
8.0
0 0.4 0.8 1.2 1.6 2.0
Figure 1. On−Region Characteristics
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
DRAIN CURRENT (AMPS)
Figure 2. Transfer Characteristics
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
DRAIN CURRENT (AMPS)
T
J
= −55°C
T
J
= 25°C
V
DS
w −10 V
T
J
= 125°C
Figure 3. On−Resistance vs. Drain Current and
Temperature
−I
D,
DRAIN CURRENT (AMPS)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (
W
)
T
J
= 125°C
V
GS
= −4.5 V
T
J
= −55°C
T
J
= 25°C
Figure 4. On−Resistance vs. Drain Current
and Temperature
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
Figure 6. Capacitance Variation
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
C
ISS
−1.0 V
V
GS
= −2.5 V to −4.5 V
T
J
= 25°C
−1.2 V
−1.4 V
−1.6 V
−1.8 V
−2.0 V
−2.2 V
2.4 2
.8
I
D
= −1.0 A
V
GS
= −4.5 V
800
600
400
200
0
0
T
J
= 25°C
V
GS
= 0 V
C
OSS
C
RSS
P1-P3P4-P5

NTS2101PT1

Mfr. #:
Buy NTS2101PT1
Manufacturer:
ON Semiconductor
Description:
MOSFET P-CH 8V 1.4A SOT-323
Lifecycle:
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