HMC797APM5E

9
9 - 1
AMPLIFIERS - LINEAR & POWER - SMT
HMC797APM5E
GaAs pHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
v04.1116
General Description
Features
Functional Diagram
The HMC797APM5E is a GaAs MMIC pHEMT Dis-
tributed Power Amplier which operates between DC
and 22 GHz. The amplier provides 13.5 dB of gain,
39 dBm output IP3 and +28 dBm of output power at
1 dB gain compression while requiring 400 mA from
a +10 V supply. This versatile PA exhibits a positive
gain slope from 4 to 20 GHz making it ideal for EW,
ECM, Radar and test equipment applications. The
HMC797APM5E amplier I/Os are internally matched
to 50 Ohms facilitating integration into mutli-chip-
modules (MCMs), is packaged in a leadless QFN 5x5
mm surface mount package, and requires no external
matching components.
High P1dB Output Power: 28 dBm
High Psat Output Power: 29.5 dBm
High Gain: 13.5 dB
High Output IP3: 39 dBm
Supply Voltage: +10 V @ 400 mA
50 Ohm Matched Input/Output
32 Lead 5x5 mm SMT Package: 25 mm²
Typical Applications
The HMC797APM5E is ideal for:
• Test Instrumentation
• Microwave Radio & VSAT
• Military & Space
• Telecom Infrastructure
• Fiber Optics
Electrical Specications, T
A
= +25° C, Vdd = +10 V, Vgg2 = +3.5 V, Idd = 400 mA*
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range DC - 12 12 - 18 18 - 22 GHz
Gain 11 12.5 11 13.5 11 13.5 dB
Gain Flatness ±0.7 ±0.5 ±0.5 dB
Gain Variation Over Temperature 0.012 0.008 0.008 dB/ °C
Input Return Loss 13 15 15 dB
Output Return Loss 12 16 13 dB
Output Power for 1 dB Compression (P1dB) 26 28 25 27 23.5 25.5 dBm
Saturated Output Power (Psat) 29.5 29 27 dBm
Output Third Order Intercept (IP3) 39 37 35 dBm
Noise Figure 3.5 4 6 dB
Supply Current
(Idd) (Vdd= 10V, Vgg1= -0.8V Typ.)
400 440 400 440 400 440 mA
* Adjust Vgg1 between -2 to 0 V to achieve Idd = 400 mA typical.
Prelimina ry
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC797APM5E* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
View a parametric search of comparable parts.
EVALUATION KITS
HMC797APM5 Evaluation Board
DOCUMENTATION
Data Sheet
HMC797APM5E: GaAs pHEMT MMIC 1 Watt Power
Amplifier, DC - 22 GHz Preliminary Data Sheet
DESIGN RESOURCES
HMC797APM5E Material Declaration
PCN-PDN Information
Quality And Reliability
Symbols and Footprints
DISCUSSIONS
View all HMC797APM5E EngineerZone Discussions.
SAMPLE AND BUY
Visit the product page to see pricing options.
TECHNICAL SUPPORT
Submit a technical question or find your regional support
number.
DOCUMENT FEEDBACK
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9
9 - 2
AMPLIFIERS - LINEAR & POWER - SMT
HMC797APM5E
v04.1116
GaAs pHEMT MMIC
1 WATT POWER AMPLIFIER, DC - 22 GHz
Outline Drawing
08-30-2016-A
1
0.50
BSC
BOTTOM VIEW
TOP VIEW
SIDE VIEW
PIN 1
INDICATOR
32
9
16
17
24
25
8
0.30
0.25
0.20
5.10
5.00 SQ
4.90
0.45
0.40
0.35
3.20
3.10 SQ
3.00
PKG-005068
3.50 REF
EXPOSED
PAD
1.35
1.25
1.15
0.050 MAX
0.035 NOM
0.203 REF
0.40
0.60 REF
COPLANARITY
0.08
SEATING
PLANE
PIN 1
INDICATOR AREA OPTIONS
(SEE DETAIL A)
DETAIL A
(JEDEC 95)
Absolute Maximum Ratings
Nominal Drain Supply to GND +12.0 V
Gate Bias Voltage (Vgg1) -3.0 to 0 Vdc
Gate Bias Current (Igg1) < +10 mA
Gate Bias Voltage (Vgg2) +2.0 V to (Vdd - 6.5 V)
Gate Bias Current (Igg2) < +10 mA
Continuous Pdiss (T= 85 °C)
(derate 69 mW/°C above 85 °C)
4.5 W
RF Input Power +27 dBm
Output Power into VSWR >7:1 +29 dBm
Storage Temperature -65 to 150 °C
Max Peak Reow Temperature 260 °C
ESD Sensitivity (HBM) Class 1A
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Vdd (V) Idd (mA)
+9 400
+10 400
+11 400
Typical Supply Current vs. Vdd
Junction Temperature to Main-
tain 1 Million Hour MTTF
150 °C
Nominal Junction Temperature
(T=85 °C, Vdd = 10 V)
144 °C
Thermal Resistance
(channel to ground paddle)
14.6 °C/ W
Operating Temperature -40 to +85 °C
Reliability Information
Prelimina ry
For price, delivery, and to place orders: Analog Devices, Inc., One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D

HMC797APM5E

Mfr. #:
Manufacturer:
Analog Devices / Hittite
Description:
RF Amplifier Amplifiers
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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