1N4447

1N4447 vs 1N4447/TR vs 1N4447 T/R

 
PartNumber1N44471N4447/TR1N4447 T/R
DescriptionDiodes - General Purpose, Power, Switching SinGLE JUNC. 100V 4ns SwitchingDiodes - General Purpose, Power, Switching Switching Diode1N4447 T/R
ManufacturerON SemiconductorMicrochip-
Product CategoryDiodes - General Purpose, Power, SwitchingDiodes - General Purpose, Power, Switching-
RoHSYN-
Mounting StyleThrough HoleThrough Hole-
Package / CaseDO-35DO-35-2-
If Forward Current200 mA200 mA-
ConfigurationSingleSingle-
Vf Forward Voltage1 V--
Ir Reverse Current25 nA--
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 175 C+ 150 C-
Series1N4447--
PackagingBulkReel-
Height1.91 mm--
Length4.56 mm--
TypeSmall Signal Schottky Diode--
Width1.91 mm--
BrandON Semiconductor / FairchildMicrochip / Microsemi-
Pd Power Dissipation500 mW--
Product TypeDiodes - General Purpose, Power, SwitchingDiodes - General Purpose, Power, Switching-
Factory Pack Quantity50001-
SubcategoryDiodes & RectifiersDiodes & Rectifiers-
Unit Weight0.003868 oz--
Product-Switching Diodes-
Peak Reverse Voltage-75 V-
Max Surge Current-500 mA-
Manufacturer Part # Description RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
1N4447 Diodes - General Purpose, Power, Switching SinGLE JUNC. 100V 4ns Switching
1N4447TR Diodes - General Purpose, Power, Switching Single Junction 100V 4ns Switching
Microchip / Microsemi
Microchip / Microsemi
1N4447/TR Diodes - General Purpose, Power, Switching Switching Diode
1N4447 T/R 1N4447 T/R
1N4447/TR Diode Switching 75V 0.2A
ON Semiconductor
ON Semiconductor
1N4447TR DIODE GEN PURP 100V DO35
1N4447 DIODE GEN PURP 100V DO35
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