 |  |  | |
| PartNumber | 1N8032-GA | 1N8030-GA | 1N8031-GA |
| Description | Schottky Diodes & Rectifiers 650V, 5A, 225 Deg C | Schottky Diodes & Rectifiers 650V, 1A, 225 Deg C | Schottky Diodes & Rectifiers 650V, 1A, 225 Deg. C |
| Manufacturer | GeneSiC Semiconductor | GeneSiC Semiconductor | GeneSiC Semiconductor |
| Product Category | Schottky Diodes & Rectifiers | Diodes, Rectifiers - Single | Diodes, Rectifiers - Single |
| RoHS | N | - | - |
| Product | Schottky Silicon Carbide Diodes | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-257-3 | - | - |
| If Forward Current | 8 A | - | - |
| Vrrm Repetitive Reverse Voltage | 650 V | - | - |
| Vf Forward Voltage | 2 V | - | - |
| Ifsm Forward Surge Current | 32 A | - | - |
| Configuration | Single | - | - |
| Technology | SiC | - | - |
| Ir Reverse Current | 10 uA | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 250 C | - | - |
| Series | 1N80 | - | - |
| Packaging | Bulk | Tube | Tube |
| Brand | GeneSiC Semiconductor | - | - |
| Pd Power Dissipation | 66 W | - | - |
| Product Type | Schottky Diodes & Rectifiers | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | Diodes & Rectifiers | - | - |
| Unit Weight | 0.010582 oz | - | - |
| Package Case | - | TO-257-3 | TO-276AA |
| Mounting Type | - | Through Hole | Through Hole |
| Supplier Device Package | - | TO-257 | TO-276 |
| Speed | - | No Recovery Time > 500mA (Io) | No Recovery Time > 500mA (Io) |
| Diode Type | - | Silicon Carbide Schottky | Silicon Carbide Schottky |
| Current Reverse Leakage Vr | - | 5μA @ 650V | 5μA @ 650V |
| Voltage Forward Vf Max If | - | 1.39V @ 750mA | 1.5V @ 1A |
| Voltage DC Reverse Vr Max | - | 650V | 650V |
| Current Average Rectified Io | - | 750mA | 1A |
| Reverse Recovery Time trr | - | 0ns | 0ns |
| Capacitance Vr F | - | 76pF @ 1V, 1MHz | 76pF @ 1V, 1MHz |
| Operating Temperature Junction | - | -55°C ~ 250°C | -55°C ~ 250°C |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
GeneSiC Semiconductor |
1N8035-GA | Schottky Diodes & Rectifiers 650V, 20A, 225 Deg C | |
| 1N8032-GA | Schottky Diodes & Rectifiers 650V, 5A, 225 Deg C | ||
| 1N8032-GA | Schottky Diodes & Rectifiers 650V, 5A, 225 Deg C | ||
| 1N8033-GA | Schottky Diodes & Rectifiers 650V, 5A, 225 Deg C | ||
| 1N8030-GA | Schottky Diodes & Rectifiers 650V, 1A, 225 Deg C | ||
| 1N8031-GA | Schottky Diodes & Rectifiers 650V, 1A, 225 Deg. C | ||
| 1N8034-GA | Schottky Diodes & Rectifiers 650V, 20A, 225 Deg C | ||
| 1N8035-GA | Schottky Diodes & Rectifiers 650V, 20A, 225 Deg C |