 |  | | |
| PartNumber | 2DA1213Y-13 | 2DA1213Y-13-GIGA | 2DA1213Y-13R |
| Description | Bipolar Transistors - BJT 1W -50V | ||
| Manufacturer | Diodes Incorporated | DIODES | - |
| Product Category | Bipolar Transistors - BJT | IC Chips | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-89-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | - 50 V | - | - |
| Collector Base Voltage VCBO | - 50 V | - | - |
| Emitter Base Voltage VEBO | - 6 V | - | - |
| Collector Emitter Saturation Voltage | - 500 mV | - | - |
| Maximum DC Collector Current | - 2 A | - | - |
| Gain Bandwidth Product fT | 160 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | 2DA12 | - | - |
| DC Current Gain hFE Max | 120 at 500 mA, 2 V | - | - |
| Height | 1.5 mm | - | - |
| Length | 4.5 mm | - | - |
| Packaging | Reel | - | - |
| Width | 2.5 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| DC Collector/Base Gain hfe Min | 120 | - | - |
| Pd Power Dissipation | 1000 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.001834 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
2DA1213Y-13 | Bipolar Transistors - BJT 1W -50V | |
| 2DA1213Y-13 | Bipolar Transistors - BJT 1W -50V | ||
| 2DA1213Y-13-GIGA | New and Original | ||
| 2DA1213Y-13R | New and Original |