PartNumber | 2DB1132Q-13 | 2DB1119S-13 | 2DB1132P-13 |
Description | Bipolar Transistors - BJT 1000W -32Vceo | Bipolar Transistors - BJT PNP 2.5K BIPOLAR | Bipolar Transistors - BJT 1000W -32Vceo |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-89-3 | SOT-89-3 | SOT-89-3 |
Transistor Polarity | PNP | PNP | PNP |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | - 32 V | 25 V | 32 V |
Collector Base Voltage VCBO | - 40 V | 25 V | 40 V |
Emitter Base Voltage VEBO | - 5 V | 5 V | 5 V |
Collector Emitter Saturation Voltage | - 125 mV | - | - |
Maximum DC Collector Current | - 1 A | 1 A | 1 A |
Gain Bandwidth Product fT | 190 MHz | 200 MHz | 190 MHz |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | 2DB11 | 2DB11 | 2DB11 |
Height | 1.5 mm | 1.5 mm | 1.5 mm |
Length | 4.5 mm | 4.5 mm | 4.5 mm |
Packaging | Reel | Reel | Reel |
Width | 2.48 mm | 2.5 mm | 2.48 mm |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
DC Collector/Base Gain hfe Min | 120 | 140 | 82 |
Pd Power Dissipation | 1000 mW | 1000 mW | 1000 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | - | - |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.001834 oz | 0.001834 oz | 0.001834 oz |
DC Current Gain hFE Max | - | 140 | - |