PartNumber | 2DB1132R-13 | 2DB1132R | 2DB1132R-13-GIGA |
Description | Bipolar Transistors - BJT 1000W -32Vceo | ||
Manufacturer | DIODES | D | DIODES |
Product Category | Transistors (BJT) - Single | Transistors (BJT) - Single | IC Chips |
Series | 2DB11 | - | - |
Packaging | Reel | - | - |
Unit Weight | 0.001834 oz | - | - |
Mounting Style | SMD/SMT | - | - |
Package Case | SOT-89 | - | - |
Configuration | Single | - | - |
Pd Power Dissipation | 1000 mW | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Collector Emitter Voltage VCEO Max | - 32 V | - | - |
Transistor Polarity | PNP | - | - |
Collector Emitter Saturation Voltage | - 125 mV | - | - |
Collector Base Voltage VCBO | - 40 V | - | - |
Emitter Base Voltage VEBO | - 5 V | - | - |
Maximum DC Collector Current | - 1 A | - | - |
Gain Bandwidth Product fT | 190 MHz | - | - |
DC Collector Base Gain hfe Min | 180 at - 100 mA - 3 V | - | - |