2DB1184Q-1

2DB1184Q-13 vs 2DB1184Q-13-88 vs 2DB1184Q-13-94

 
PartNumber2DB1184Q-132DB1184Q-13-882DB1184Q-13-94
DescriptionBipolar Transistors - BJT PNP 2.5K BIPOLAR
ManufacturerDiodes Incorporated-DIODES
Product CategoryBipolar Transistors - BJT-IC Chips
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseDPAK-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max50 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current3 A--
Gain Bandwidth Product fT110 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Series2DB11--
DC Current Gain hFE Max120--
Height2.4 mm--
Length6.8 mm--
PackagingReel--
Width6.2 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation15000 mW--
Product TypeBJTs - Bipolar Transistors--
QualificationAEC-Q101--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.009185 oz--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
2DB1184Q-13 Bipolar Transistors - BJT PNP 2.5K BIPOLAR
2DB1184Q-13 Bipolar Transistors - BJT PNP 2.5K BIPOLAR
2DB1184Q-13-88 New and Original
2DB1184Q-13-94 New and Original
2DB1184Q-13-F New and Original
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