PartNumber | 2DB1188Q-13 | 2DB1188Q | 2DB1188Q-13R |
Description | Bipolar Transistors - BJT 1000W -32Vceo | ||
Manufacturer | Diodes Incorporated | - | - |
Product Category | Bipolar Transistors - BJT | - | - |
RoHS | Y | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-89-3 | - | - |
Transistor Polarity | PNP | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | - 32 V | - | - |
Collector Base Voltage VCBO | - 40 V | - | - |
Emitter Base Voltage VEBO | - 5 V | - | - |
Collector Emitter Saturation Voltage | - 800 mV | - | - |
Maximum DC Collector Current | - 3 A | - | - |
Gain Bandwidth Product fT | 120 MHz | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Series | 2DB11 | - | - |
Height | 1.5 mm | - | - |
Length | 4.5 mm | - | - |
Packaging | Reel | - | - |
Width | 2.48 mm | - | - |
Brand | Diodes Incorporated | - | - |
DC Collector/Base Gain hfe Min | 120 | - | - |
Pd Power Dissipation | 1000 mW | - | - |
Product Type | BJTs - Bipolar Transistors | - | - |
Qualification | AEC-Q101 | - | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.001834 oz | - | - |