2DB1188Q

2DB1188Q-13 vs 2DB1188Q vs 2DB1188Q-13R

 
PartNumber2DB1188Q-132DB1188Q2DB1188Q-13R
DescriptionBipolar Transistors - BJT 1000W -32Vceo
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-89-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 32 V--
Collector Base Voltage VCBO- 40 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 800 mV--
Maximum DC Collector Current- 3 A--
Gain Bandwidth Product fT120 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Series2DB11--
Height1.5 mm--
Length4.5 mm--
PackagingReel--
Width2.48 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min120--
Pd Power Dissipation1000 mW--
Product TypeBJTs - Bipolar Transistors--
QualificationAEC-Q101--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.001834 oz--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
2DB1188Q-13 Bipolar Transistors - BJT 1000W -32Vceo
2DB1188Q-13 Bipolar Transistors - BJT 1000W -32Vceo
2DB1188Q New and Original
2DB1188Q-13R New and Original
2DB1188Q-7 New and Original
2DB1188Q13 New and Original
Top