2DB16

2DB1694-7 vs 2DB1689-7 vs 2DB1694-7-F

 
PartNumber2DB1694-72DB1689-72DB1694-7-F
DescriptionBipolar Transistors - BJT LOW VSAT PNP SMT 3KBipolar Transistors - BJT LOW VSAT PNP SMT 3K
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-323-3SOT-323-3-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 30 V- 12 V-
Collector Base Voltage VCBO- 30 V- 15 V-
Emitter Base Voltage VEBO- 6 V- 6 V-
Collector Emitter Saturation Voltage- 380 mV--
Maximum DC Collector Current- 2 A- 3 A-
Gain Bandwidth Product fT300 MHz300 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Series2DB162DB16-
DC Current Gain hFE Max270 at 100 mA, 2 V270 at 200 mA, 2 V-
Height1 mm1 mm-
Length2.15 mm2.15 mm-
PackagingReelReel-
Width1.3 mm1.3 mm-
BrandDiodes IncorporatedDiodes Incorporated-
DC Collector/Base Gain hfe Min270 at 100 mA, 2 V270 at 200 mA, 2 V-
Pd Power Dissipation500 mW500 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000176 oz0.000176 oz-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
2DB1697-13 Bipolar Transistors - BJT LO VSAT PNP SMT 2.5K
2DB1694-7 Bipolar Transistors - BJT LOW VSAT PNP SMT 3K
2DB1689-7 Bipolar Transistors - BJT LOW VSAT PNP SMT 3K
2DB1689-7 Bipolar Transistors - BJT LOW VSAT PNP SMT 3K
2DB1697-13 Bipolar Transistors - BJT LO VSAT PNP SMT 2.5K
2DB1694-7 Bipolar Transistors - BJT LOW VSAT PNP SMT 3K
2DB1694-7-F New and Original
2DB1697 New and Original
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