PartNumber | 2DD1664Q-13 | 2DD1664P-13 | 2DD1621T-13 |
Description | Bipolar Transistors - BJT 1000W 32Vceo | Bipolar Transistors - BJT 1000W 32Vceo | Bipolar Transistors - BJT 1W 25V |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-89-3 | SOT-89-3 | SOT-89-3 |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 32 V | 32 V | 25 V |
Collector Base Voltage VCBO | 40 V | 40 V | 30 V |
Emitter Base Voltage VEBO | 5 V | 5 V | 6 V |
Maximum DC Collector Current | 1 A | 1 A | 2 A |
Gain Bandwidth Product fT | 280 MHz | 280 MHz | 300 MHz |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | 2DD16 | 2DD16 | 2DD16 |
Height | 1.5 mm | 1.5 mm | 1.5 mm |
Length | 4.5 mm | 4.5 mm | 4.5 mm |
Packaging | Reel | Reel | Reel |
Width | 2.48 mm | 2.48 mm | 2.5 mm |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
DC Collector/Base Gain hfe Min | 120 | 82 | 65 at 1.5 A, 2 V |
Pd Power Dissipation | 1000 mW | 1000 mW | 1000 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Qualification | AEC-Q101 | - | - |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | Transistors | Transistors | Transistors |
Unit Weight | 0.001834 oz | 0.001834 oz | 0.001834 oz |
Collector Emitter Saturation Voltage | - | - | 400 mV |
DC Current Gain hFE Max | - | - | 200 at 100 mA, 2 V |