2DD265

2DD2652-7 vs 2DD2652 vs 2DD2656

 
PartNumber2DD2652-72DD26522DD2656
DescriptionBipolar Transistors - BJT LOW VSAT NPN SMT 3K
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-323-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max12 V--
Collector Base Voltage VCBO15 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage200 mV200 mV-
Maximum DC Collector Current3 A3 A-
Gain Bandwidth Product fT260 MHz260 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Series2DD22DD2-
DC Current Gain hFE Max270 at 200 mA, 2 V270 at 200 mA at 2 V-
Height1 mm--
Length2.15 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width1.3 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min270 at 200 mA, 2 V--
Pd Power Dissipation500 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000176 oz0.000212 oz-
Package Case-SC-70, SOT-323-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-323-
Power Max-300mW-
Transistor Type-NPN-
Current Collector Ic Max-1.5A-
Voltage Collector Emitter Breakdown Max-12V-
DC Current Gain hFE Min Ic Vce-270 @ 200mA, 2V-
Vce Saturation Max Ib Ic-200mV @ 25mA, 500mA-
Current Collector Cutoff Max-100nA (ICBO)-
Frequency Transition-260MHz-
Pd Power Dissipation-500 mW-
Collector Emitter Voltage VCEO Max-12 V-
Collector Base Voltage VCBO-15 V-
Emitter Base Voltage VEBO-6 V-
DC Collector Base Gain hfe Min-270 at 200 mA 2 V-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
2DD2652-7 Bipolar Transistors - BJT LOW VSAT NPN SMT 3K
2DD2656-7 Bipolar Transistors - BJT LOW VSAT NPN SMT 3K
2DD2656-7 Bipolar Transistors - BJT LOW VSAT NPN SMT 3K
2DD2652-7 Bipolar Transistors - BJT LOW VSAT NPN SMT 3K
2DD2652 New and Original
2DD2656 New and Original
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