2DD2679

2DD2679-13 vs 2DD2679 vs 2DD2679-13-F

 
PartNumber2DD2679-132DD26792DD2679-13-F
DescriptionBipolar Transistors - BJT LO VSAT NPN SMT 2.5K
ManufacturerDiodes IncorporatedDIODES-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-89-3--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max30 V--
Collector Base Voltage VCBO30 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage370 mV370 mV-
Maximum DC Collector Current4 A4 A-
Gain Bandwidth Product fT240 MHz240 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Series2DD22DD2-
DC Current Gain hFE Max270270-
Height1.5 mm--
Length4.5 mm--
PackagingReelReel-
Width2.5 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min270 at 200 mA, 2 V--
Pd Power Dissipation2000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.001834 oz0.001834 oz-
Package Case-SOT-89-
Pd Power Dissipation-2000 mW-
Collector Emitter Voltage VCEO Max-30 V-
Collector Base Voltage VCBO-30 V-
Emitter Base Voltage VEBO-6 V-
DC Collector Base Gain hfe Min-270 at 200 mA 2 V-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
2DD2679-13 Bipolar Transistors - BJT LO VSAT NPN SMT 2.5K
2DD2679-13 Bipolar Transistors - BJT LO VSAT NPN SMT 2.5K
2DD2679 New and Original
2DD2679-13-F New and Original
2DD2679-7 New and Original
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