2MBI6 stock, 2MBI6, 2MBI600NT-060

2MBI600NT-060 vs 2MBI600U2E-060 vs 2MBI600VE-060


PartNumber	2MBI600NT-060	2MBI600U2E-060	2MBI600VE-060
Description	Insulated Gate Bipolar Transistor,600AI(C),600VV(BR)CES, N-Channel	600A, 650V, N-CHANNEL IGBT
Manufacturer	-	FUJI	-
Product Category	-	Module	-

Search Part Number : "2MBI6", Match & Start with "2MBI6" - Total : 13

Manufacturer	Part #	Description	RFQ
	2MBI600NT-060	Insulated Gate Bipolar Transistor,600AI(C),600VV(BR)CES, N-Channel
	2MBI600U2E-060	600A, 650V, N-CHANNEL IGBT
	2MBI600VE-060	New and Original
	2MBI600VE-120-50	2 Pack IGBT VE-series, 600A, 1200V
	2MBI600VN-120	New and Original
	2MBI600VN-120-50	Insulated GateBipolarTransistor,600AI(C),1200VV(BR)CES, N-Channel
	2MBI600VN-120-50-M	Insulated GateBipolarTransistor,600AI(C),1200VV(BR)CES, N-Channel
	2MBI600VN-120-50/SL600H1	New and Original
	2MBI600VN-170-50	New and Original
	2MBI600VXA-120E-50	IGBT, MODULE, DUAL N CHANNEL, 1.2KV, 800A, Transistor Polarity:Dual N Channel, DC Collector Current:800A, Collector Emitter Saturation Voltage Vce(on):1.85V, Power Dissipation Pd:3.35kW, Collecto
	2MBI600VXA-120E-51	IGBT HPM
	2MBI650VXA-170-50	New and Original
	2MBI650VXA-170E-50	IGBT, MODULE, DUAL N CHANNEL, 1.7KV, 900A, Transistor Polarity:Dual N Channel, DC Collector Current:900A, Collector Emitter Saturation Voltage Vce(on):2.1V, Power Dissipation Pd:4.15kW, Collector