PartNumber | 2N1131 | 2N1131B | 2N1131A |
Description | Bipolar Transistors - BJT 50Vcbo 50Vcer 35Vceo 0.6A Ic 2.0W PNP | Bipolar Transistors - BJT PNP Gen Amp/Switch 40Vceo 50Vcbo | Bipolar Transistors - BJT PNP 60Vcbo 40Vceo 5.0Vebo 150mA 45pF |
Manufacturer | Central Semiconductor | Central Semiconductor | Central Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Technology | Si | - | Si |
Mounting Style | Through Hole | - | Through Hole |
Package / Case | TO-39-3 | TO-39-3 | TO-39-3 |
Transistor Polarity | PNP | - | PNP |
Configuration | Single | - | Single |
Collector Emitter Voltage VCEO Max | 35 V | - | 40 V |
Collector Base Voltage VCBO | 50 V | - | 60 V |
Emitter Base Voltage VEBO | 5 V | - | 5 V |
Collector Emitter Saturation Voltage | 1.5 V | - | 1.5 V |
Maximum DC Collector Current | 0.6 A | - | - |
Gain Bandwidth Product fT | 50 MHz | - | 90 MHz |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 200 C | - | - |
Packaging | Bulk | Bulk | Bulk |
Brand | Central Semiconductor | Central Semiconductor | Central Semiconductor |
Continuous Collector Current | 0.6 A | - | 150 mA |
DC Collector/Base Gain hfe Min | 15 at 5 mA, 10 V | - | 20 at 150 mA, 10 V |
Pd Power Dissipation | 600 mW | - | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 500 | 500 | 500 |
Subcategory | Transistors | Transistors | Transistors |
Part # Aliases | 2N1131 PBFREE | 2N1131B PBFREE | 2N1131A PBFREE |
Unit Weight | 0.035486 oz | - | - |
Series | - | 2N657 | 2N657 |