2N1131

2N1131 vs 2N1131B vs 2N1131A

 
PartNumber2N11312N1131B2N1131A
DescriptionBipolar Transistors - BJT 50Vcbo 50Vcer 35Vceo 0.6A Ic 2.0W PNPBipolar Transistors - BJT PNP Gen Amp/Switch 40Vceo 50VcboBipolar Transistors - BJT PNP 60Vcbo 40Vceo 5.0Vebo 150mA 45pF
ManufacturerCentral SemiconductorCentral SemiconductorCentral Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYYY
TechnologySi-Si
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-39-3TO-39-3TO-39-3
Transistor PolarityPNP-PNP
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max35 V-40 V
Collector Base Voltage VCBO50 V-60 V
Emitter Base Voltage VEBO5 V-5 V
Collector Emitter Saturation Voltage1.5 V-1.5 V
Maximum DC Collector Current0.6 A--
Gain Bandwidth Product fT50 MHz-90 MHz
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 200 C--
PackagingBulkBulkBulk
BrandCentral SemiconductorCentral SemiconductorCentral Semiconductor
Continuous Collector Current0.6 A-150 mA
DC Collector/Base Gain hfe Min15 at 5 mA, 10 V-20 at 150 mA, 10 V
Pd Power Dissipation600 mW--
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity500500500
SubcategoryTransistorsTransistorsTransistors
Part # Aliases2N1131 PBFREE2N1131B PBFREE2N1131A PBFREE
Unit Weight0.035486 oz--
Series-2N6572N657
Manufacturer Part # Description RFQ
Central Semiconductor
Central Semiconductor
2N1131 Bipolar Transistors - BJT 50Vcbo 50Vcer 35Vceo 0.6A Ic 2.0W PNP
2N1131B Bipolar Transistors - BJT PNP Gen Amp/Switch 40Vceo 50Vcbo
2N1131A Bipolar Transistors - BJT PNP 60Vcbo 40Vceo 5.0Vebo 150mA 45pF
Central Semiconductor
Central Semiconductor
2N1131 Trans GP BJT PNP 40V 0.6A 3-Pin TO-39
2N1131A THROUGH-HOLE TRANSISTOR-SMALL SI
2N1131AS New and Original
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