| PartNumber | 2N2219Ae3 | 2N2219A | 2N2219Ae3/TR |
| Description | Bipolar Transistors - BJT | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | N | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-39-3 | TO-39-3 | TO-39-3 |
| Transistor Polarity | NPN | NPN | NPN |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 50 V | 50 V | 50 V |
| Collector Base Voltage VCBO | 75 V | 75 V | 75 V |
| Emitter Base Voltage VEBO | 6 V | 6 V | 6 V |
| Collector Emitter Saturation Voltage | 0.3 V | 300 mV | 0.3 V |
| Maximum DC Collector Current | 800 mA | 800 mA | 800 mA |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 200 C | + 200 C | + 200 C |
| DC Current Gain hFE Max | 325 at 1 mA, 10 V | 325 at 1 mA, 10 VDC | 325 at 1 mA, 10 V |
| Packaging | Bulk | Bulk | Reel |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| DC Collector/Base Gain hfe Min | 50 at 100 uA, 10 V | 75 at 1 mA, 10 VDC | 50 at 100 uA, 10 V |
| Pd Power Dissipation | 3 W | 800 mW | 3 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 1 | 100 |
| Subcategory | Transistors | Transistors | Transistors |