PartNumber | 2N2219Ae3 | 2N2219A | 2N2219Ae3/TR |
Description | Bipolar Transistors - BJT | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | N | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-39-3 | TO-39-3 | TO-39-3 |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 50 V | 50 V | 50 V |
Collector Base Voltage VCBO | 75 V | 75 V | 75 V |
Emitter Base Voltage VEBO | 6 V | 6 V | 6 V |
Collector Emitter Saturation Voltage | 0.3 V | 300 mV | 0.3 V |
Maximum DC Collector Current | 800 mA | 800 mA | 800 mA |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 200 C | + 200 C | + 200 C |
DC Current Gain hFE Max | 325 at 1 mA, 10 V | 325 at 1 mA, 10 VDC | 325 at 1 mA, 10 V |
Packaging | Bulk | Bulk | Reel |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
DC Collector/Base Gain hfe Min | 50 at 100 uA, 10 V | 75 at 1 mA, 10 VDC | 50 at 100 uA, 10 V |
Pd Power Dissipation | 3 W | 800 mW | 3 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | 1 | 100 |
Subcategory | Transistors | Transistors | Transistors |