PartNumber | 2N2906 | 2N2907 | 2N2906A |
Description | Bipolar Transistors - BJT PNP 60Vcbo 40Vceo 5.0Vebo 0.6A 0.8W | Bipolar Transistors - BJT PNP Silicon | Bipolar Transistors - BJT PNP Gen Pur SS |
Manufacturer | Central Semiconductor | Central Semiconductor | Central Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Technology | Si | - | - |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-18 | TO-18 | TO-18 |
Transistor Polarity | PNP | PNP | PNP |
Configuration | Single | - | Single |
Collector Emitter Voltage VCEO Max | 40 V | 40 V | 60 V |
Collector Base Voltage VCBO | 60 V | 60 V | 60 V |
Emitter Base Voltage VEBO | 5 V | 5 V | 5 V |
Collector Emitter Saturation Voltage | 1.6 V | 1.6 V | 2.6 V |
Maximum DC Collector Current | 600 mA | 0.6 A | 600 mA |
Gain Bandwidth Product fT | 200 MHz | 200 MHz | 200 MHz |
Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
Maximum Operating Temperature | + 200 C | + 150 C | + 200 C |
Packaging | Bulk | Bulk | Bulk |
Brand | Central Semiconductor | Central Semiconductor | Central Semiconductor |
Continuous Collector Current | 600 mA | 0.45 A | - |
DC Collector/Base Gain hfe Min | - | 35 | 40 at 150 mA, 10 V |
Pd Power Dissipation | 400 mW | 400 mW | 4000 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 2000 | 2000 | 2000 |
Subcategory | Transistors | Transistors | Transistors |
Part # Aliases | 2N2906 PBFREE | 2N2907 PBFREE | 2N2906A PBFREE |
Unit Weight | 0.011020 oz | - | 0.011020 oz |
Series | - | 2N2907 | 2N2906 |