PartNumber | 2N2907Ae4 | 2N2907Ae3 | 2N2907Ae3/TR |
Description | Bipolar Transistors - BJT BJTs | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Packaging | Bulk | Bulk | Reel |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | 1 | 100 |
Subcategory | Transistors | Transistors | Transistors |
Technology | - | Si | Si |
Mounting Style | - | Through Hole | Through Hole |
Package / Case | - | TO-206AA-3 | TO-206AA-3 |
Transistor Polarity | - | PNP | PNP |
Configuration | - | Single | Single |
Collector Emitter Voltage VCEO Max | - | 60 V | 60 V |
Collector Base Voltage VCBO | - | 60 V | 60 V |
Emitter Base Voltage VEBO | - | 5 V | 5 V |
Collector Emitter Saturation Voltage | - | 0.4 V | 0.4 V |
Maximum DC Collector Current | - | 600 mA | 600 mA |
Minimum Operating Temperature | - | - 65 C | - 65 C |
Maximum Operating Temperature | - | + 200 C | + 200 C |
DC Current Gain hFE Max | - | 450 at 1 mA, 10 V | 450 at 1 mA, 10 V |
DC Collector/Base Gain hfe Min | - | 50 at 500 mA, 10 V | 50 at 500 mA, 10 V |
Pd Power Dissipation | - | 0.5 W | 0.5 W |