PartNumber | 2N3250 | 2N3250A | 2N3250A/TR |
Description | Bipolar Transistors - BJT PNP Gen Pur SS | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT |
Manufacturer | Central Semiconductor | Microchip | Microchip |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | N | N |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-18 | TO-39-3 | TO-39-3 |
Transistor Polarity | PNP | - | PNP |
Configuration | Single | - | Single |
Collector Emitter Voltage VCEO Max | 40 V | - | 60 V |
Collector Base Voltage VCBO | 50 V | - | 60 V |
Emitter Base Voltage VEBO | 5 V | - | 5 V |
Collector Emitter Saturation Voltage | 0.5 V | - | 0.5 V |
Maximum DC Collector Current | 0.2 A | - | 200 mA |
Gain Bandwidth Product fT | 250 MHz | - | - |
Minimum Operating Temperature | - 65 C | - | - 65 C |
Maximum Operating Temperature | + 150 C | - | + 175 C |
Series | 2N3250 | - | - |
Height | 5.33 mm | - | - |
Length | 5.84 mm | - | - |
Packaging | Bulk | Bulk | Reel |
Width | 5.84 mm | - | - |
Brand | Central Semiconductor | Microchip / Microsemi | Microchip / Microsemi |
DC Collector/Base Gain hfe Min | 15 | - | 15 at 50 mA, 1 V |
Pd Power Dissipation | 360 mW | - | 1.2 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 2000 | 1 | 100 |
Subcategory | Transistors | Transistors | Transistors |
Part # Aliases | 2N3250 PBFREE | - | - |
Technology | - | - | Si |
DC Current Gain hFE Max | - | - | 150 at 10 mA, 1 V |