| PartNumber | 2N3500 | 2N3500L | 2N3500/TR |
| Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT NPN Transistor | Bipolar Transistors - BJT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | N | N | N |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-39-3 | TO-5-3 | TO-39-3 |
| Transistor Polarity | NPN | - | NPN |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 150 V | - | 150 V |
| Collector Base Voltage VCBO | 150 V | - | 150 V |
| Emitter Base Voltage VEBO | 6 V | - | 6 V |
| Collector Emitter Saturation Voltage | 200 mV | - | 0.4 V |
| Maximum DC Collector Current | 300 mA | - | 300 mA |
| Minimum Operating Temperature | - 65 C | - | - 65 C |
| Maximum Operating Temperature | + 200 C | - | + 200 C |
| DC Current Gain hFE Max | 120 at 150 mA, 10 V | - | 120 at 150 mA, 10 V |
| Packaging | Bulk | Foil Bag | Reel |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| DC Collector/Base Gain hfe Min | 40 at 150 mA, 10 V | - | 15 at 300 mA, 10 V |
| Pd Power Dissipation | 1 W | - | 1 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 1 | 1 | 100 |
| Subcategory | Transistors | Transistors | Transistors |