2N3811

2N3811 vs 2N3811A vs 2N3811JAN

 
PartNumber2N38112N3811A2N3811JAN
DescriptionBipolar Transistors - BJT PNP 60Vcbo 60Vces 5.0Vebo 50mA 500mWTRANS 2PNP 50MA 60V TO78-6
ManufacturerCentral Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-78-6--
Transistor PolarityPNP--
ConfigurationDual--
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO60 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage0.25 V--
Gain Bandwidth Product fT500 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 200 C--
Series2N3811--
DC Current Gain hFE Max900 at 1 mA, 5 V--
PackagingBulk--
BrandCentral Semiconductor--
Continuous Collector Current50 mA--
DC Collector/Base Gain hfe Min75 at 1 uA, 5 V--
Pd Power Dissipation600 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity100--
SubcategoryTransistors--
Part # Aliases2N3811 PBFREE--
Manufacturer Part # Description RFQ
Central Semiconductor
Central Semiconductor
2N3811 Bipolar Transistors - BJT PNP 60Vcbo 60Vces 5.0Vebo 50mA 500mW
Microchip / Microsemi
Microchip / Microsemi
2N3811 TRANS 2PNP 60V 0.05A TO-78
Central Semiconductor
Central Semiconductor
2N3811A TRANS 2PNP 50MA 60V TO78-6
2N3811JAN New and Original
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