PartNumber | 2N4169 | 2N4150 | 2N4150S |
Description | SCRs 100Vrrm 100Itsm 8.0A 30mA 1.5V | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT |
Manufacturer | Central Semiconductor | Microchip | Microchip |
Product Category | SCRs | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | N | N |
Series | 2N4169 | - | - |
Rated Repetitive Off State Voltage VDRM | 100 V | - | - |
On State RMS Current It RMS | 8 A | - | - |
Gate Trigger Voltage Vgt | 1.5 V | - | - |
Gate Trigger Current Igt | 30 mA | - | - |
Holding Current Ih Max | 30 mA | - | - |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-64-3 | TO-5-3 | - |
Packaging | Bulk | Bulk | Foil Bag |
Brand | Central Semiconductor | Microchip / Microsemi | Microchip / Microsemi |
Non Repetitive On State Current | 100 A | - | - |
Product Type | SCRs | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 250 | 1 | 1 |
Subcategory | Thyristors | Transistors | Transistors |
Part # Aliases | 2N4169 PBFREE | - | - |
Technology | - | Si | - |
Transistor Polarity | - | NPN | - |
Configuration | - | Single | - |
Collector Emitter Voltage VCEO Max | - | 70 V | - |
Collector Base Voltage VCBO | - | 100 V | - |
Emitter Base Voltage VEBO | - | 10 V | - |
Collector Emitter Saturation Voltage | - | 600 mV | - |
Maximum DC Collector Current | - | 10 A | - |
Minimum Operating Temperature | - | - 65 C | - |
Maximum Operating Temperature | - | + 200 C | - |
DC Current Gain hFE Max | - | 200 at 1 A, 5 VDC | - |
DC Collector/Base Gain hfe Min | - | 50 at 1 A, 5 VDC | - |
Pd Power Dissipation | - | 1 W | - |