PartNumber | 2N4424 | 2N4424 TRE | 2N4416A TIN/LEAD |
Description | Bipolar Transistors - BJT NPN Gen Pur SS | Bipolar Transistors - BJT NPN 60Vcbo 40Vceo 5.0Vebo 500mA 625mW | JFET N-Ch 35Vgd 35Vgs 35Vds 10mA 300mW |
Manufacturer | Central Semiconductor | Central Semiconductor | Central Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | JFET |
RoHS | Y | Y | N |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-92-3 | TO-92-3 | TO-72-4 |
Transistor Polarity | NPN | NPN | N-Channel |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 40 V | 40 V | - |
Collector Base Voltage VCBO | 60 V | 60 V | - |
Emitter Base Voltage VEBO | 5 V | 5 V | - |
Collector Emitter Saturation Voltage | 850 mV | 0.3 V | - |
Maximum DC Collector Current | 500 mA | - | - |
Minimum Operating Temperature | - 65 C | - 65 C | - 65 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 200 C |
Series | 2N4424 | 2N4424 | 2N4416A |
Height | 5.33 mm | - | - |
Length | 5.21 mm | - | - |
Packaging | Bulk | Reel | - |
Width | 4.19 mm | - | - |
Brand | Central Semiconductor | Central Semiconductor | Central Semiconductor |
DC Collector/Base Gain hfe Min | 180 at 2 mA, 4.5 V | 180 at 2 mA, 4.5 V | - |
Pd Power Dissipation | 625 mW | 625 mW | 300 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | JFETs |
Factory Pack Quantity | 2500 | 2000 | 2000 |
Subcategory | Transistors | Transistors | Transistors |
Part # Aliases | 2N4424 PBFREE | 2N4424 PBFREE TRE | - |
Unit Weight | 0.016000 oz | - | - |
Technology | - | Si | Si |
DC Current Gain hFE Max | - | 540 at 5 mA, 4.5 V | - |
Continuous Collector Current | - | 500 mA | - |
Vds Drain Source Breakdown Voltage | - | - | 35 V |
Vgs Gate Source Breakdown Voltage | - | - | 35 V |
Drain Source Current at Vgs=0 | - | - | 15 mA |
Gate Source Cutoff Voltage | - | - | 6 V |