| PartNumber | 2N4410 | 2N4416 | 2N4416A |
| Description | Bipolar Transistors - BJT 120Vcbo 80Vceo 5.0Vebo 250mA 625mW | JFET JFET N-Channel -30V 10mA 300mW 2mW | JFET JFET N-Channel -30V 10mA 300mW 2mW |
| Manufacturer | Central Semiconductor | InterFET | InterFET |
| Product Category | Bipolar Transistors - BJT | JFET | JFET |
| RoHS | Y | Y | Y |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-92-3 | TO-72-4 | TO-72-4 |
| Transistor Polarity | NPN | N-Channel | N-Channel |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 80 V | - | - |
| Collector Base Voltage VCBO | 120 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 200 mV | - | - |
| Maximum DC Collector Current | 10 mA | - | - |
| Gain Bandwidth Product fT | 60 MHz | - | - |
| Series | 2N4410 | 2N4416 | 2N4416 |
| Height | 5.33 mm | - | - |
| Length | 5.21 mm | - | - |
| Packaging | Bulk | Bulk | Bulk |
| Width | 4.19 mm | - | - |
| Brand | Central Semiconductor | InterFET | InterFET |
| Continuous Collector Current | 0.45 A | - | - |
| DC Collector/Base Gain hfe Min | 60 at 10 mA, 1 V | - | - |
| Pd Power Dissipation | 625 mW | 300 mW | 300 mW |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 2500 | 1 | 1 |
| Subcategory | Transistors | - | - |
| Part # Aliases | 2N4410 PBFREE | SMP4416, SMP4416-TR | - |
| Unit Weight | 0.015873 oz | - | - |
| Technology | - | Si | Si |
| Vds Drain Source Breakdown Voltage | - | 15 V | 15 V |
| Vgs Gate Source Breakdown Voltage | - | - 30 V | - 35 V |
| Drain Source Current at Vgs=0 | - | 15 mA | 15 mA |
| Id Continuous Drain Current | - | 1 nA | 1 nA |
| Type | - | JFET | JFET |
| Forward Transconductance Min | - | 4000 uS | 4000 uS |
| Gate Source Cutoff Voltage | - | - 6 V | - 6 V |