PartNumber | 2N4410 | 2N4416 | 2N4416A |
Description | Bipolar Transistors - BJT 120Vcbo 80Vceo 5.0Vebo 250mA 625mW | JFET JFET N-Channel -30V 10mA 300mW 2mW | JFET JFET N-Channel -30V 10mA 300mW 2mW |
Manufacturer | Central Semiconductor | InterFET | InterFET |
Product Category | Bipolar Transistors - BJT | JFET | JFET |
RoHS | Y | Y | Y |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-92-3 | TO-72-4 | TO-72-4 |
Transistor Polarity | NPN | N-Channel | N-Channel |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 80 V | - | - |
Collector Base Voltage VCBO | 120 V | - | - |
Emitter Base Voltage VEBO | 5 V | - | - |
Collector Emitter Saturation Voltage | 200 mV | - | - |
Maximum DC Collector Current | 10 mA | - | - |
Gain Bandwidth Product fT | 60 MHz | - | - |
Series | 2N4410 | 2N4416 | 2N4416 |
Height | 5.33 mm | - | - |
Length | 5.21 mm | - | - |
Packaging | Bulk | Bulk | Bulk |
Width | 4.19 mm | - | - |
Brand | Central Semiconductor | InterFET | InterFET |
Continuous Collector Current | 0.45 A | - | - |
DC Collector/Base Gain hfe Min | 60 at 10 mA, 1 V | - | - |
Pd Power Dissipation | 625 mW | 300 mW | 300 mW |
Product Type | BJTs - Bipolar Transistors | - | - |
Factory Pack Quantity | 2500 | 1 | 1 |
Subcategory | Transistors | - | - |
Part # Aliases | 2N4410 PBFREE | SMP4416, SMP4416-TR | - |
Unit Weight | 0.015873 oz | - | - |
Technology | - | Si | Si |
Vds Drain Source Breakdown Voltage | - | 15 V | 15 V |
Vgs Gate Source Breakdown Voltage | - | - 30 V | - 35 V |
Drain Source Current at Vgs=0 | - | 15 mA | 15 mA |
Id Continuous Drain Current | - | 1 nA | 1 nA |
Type | - | JFET | JFET |
Forward Transconductance Min | - | 4000 uS | 4000 uS |
Gate Source Cutoff Voltage | - | - 6 V | - 6 V |