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| PartNumber | 2N4912 | 2N4911 | 2N4910 PBFREE |
| Description | Bipolar Transistors - BJT . . | Bipolar Transistors - BJT . . | Bipolar Transistors - BJT PNP 1.0A 25W 40Vcbo 40Vceo 0.6V |
| Manufacturer | Central Semiconductor | Central Semiconductor | Central Semiconductor |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y | Y |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-66-2 | TO-66-2 | TO-66-2 |
| Transistor Polarity | NPN | - | NPN |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 80 V | - | 40 V |
| Collector Base Voltage VCBO | 80 V | - | 40 V |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 600 mV | - | 0.6 V |
| Maximum DC Collector Current | 1 A | - | - |
| Gain Bandwidth Product fT | 3 MHz | - | 3 MHz |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 200 C | - | - |
| Series | 2N4912 | 2N4911 | 2N49 |
| DC Current Gain hFE Max | 100 at 500 mA, 1 V | - | 150 at 500 mA |
| Packaging | Tube | Tube | Tube |
| Brand | Central Semiconductor | Central Semiconductor | Central Semiconductor |
| DC Collector/Base Gain hfe Min | 20 at 500 mA, 1 V | - | 20 at 500 mA |
| Pd Power Dissipation | 25 W | - | 25 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 30 | 30 | 30 |
| Subcategory | Transistors | Transistors | Transistors |
| Part # Aliases | 2N4912 PBFREE | 2N4911 PBFREE | - |
| Unit Weight | 0.206000 oz | - | - |
| Continuous Collector Current | - | - | 1 A |