PartNumber | 2N4912 | 2N4911 | 2N4910 PBFREE |
Description | Bipolar Transistors - BJT . . | Bipolar Transistors - BJT . . | Bipolar Transistors - BJT PNP 1.0A 25W 40Vcbo 40Vceo 0.6V |
Manufacturer | Central Semiconductor | Central Semiconductor | Central Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Technology | Si | - | Si |
Mounting Style | Through Hole | - | Through Hole |
Package / Case | TO-66-2 | TO-66-2 | TO-66-2 |
Transistor Polarity | NPN | - | NPN |
Configuration | Single | - | Single |
Collector Emitter Voltage VCEO Max | 80 V | - | 40 V |
Collector Base Voltage VCBO | 80 V | - | 40 V |
Emitter Base Voltage VEBO | 5 V | - | - |
Collector Emitter Saturation Voltage | 600 mV | - | 0.6 V |
Maximum DC Collector Current | 1 A | - | - |
Gain Bandwidth Product fT | 3 MHz | - | 3 MHz |
Minimum Operating Temperature | - 65 C | - | - |
Maximum Operating Temperature | + 200 C | - | - |
Series | 2N4912 | 2N4911 | 2N49 |
DC Current Gain hFE Max | 100 at 500 mA, 1 V | - | 150 at 500 mA |
Packaging | Tube | Tube | Tube |
Brand | Central Semiconductor | Central Semiconductor | Central Semiconductor |
DC Collector/Base Gain hfe Min | 20 at 500 mA, 1 V | - | 20 at 500 mA |
Pd Power Dissipation | 25 W | - | 25 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | Transistors | Transistors | Transistors |
Part # Aliases | 2N4912 PBFREE | 2N4911 PBFREE | - |
Unit Weight | 0.206000 oz | - | - |
Continuous Collector Current | - | - | 1 A |