PartNumber | 2N4957UB | 2N4957UB/TR | 2N4957 |
Description | Bipolar Transistors - BJT Small-Signal BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT BJTs |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | N | N | N |
Packaging | Waffle | Reel | Foil Bag |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | 100 | 1 |
Subcategory | Transistors | Transistors | Transistors |
Technology | - | Si | - |
Mounting Style | - | SMD/SMT | - |
Package / Case | - | LCC-3 | - |
Transistor Polarity | - | PNP | - |
Configuration | - | Single | - |
Collector Emitter Voltage VCEO Max | - | - 30 V | - |
Collector Base Voltage VCBO | - | - 30 V | - |
Emitter Base Voltage VEBO | - | - 3 V | - |
Maximum DC Collector Current | - | - 30 mA | - |
Minimum Operating Temperature | - | - 65 C | - |
Maximum Operating Temperature | - | + 200 C | - |
DC Current Gain hFE Max | - | 165 at - 5 mA, 10 V | - |
DC Collector/Base Gain hfe Min | - | 10 at - 5 mA, 10 V | - |
Pd Power Dissipation | - | 200 mW | - |