2N5060R

2N5060RLRAG vs 2N5060RLRM vs 2N5060RLRMG

 
PartNumber2N5060RLRAG2N5060RLRM2N5060RLRMG
DescriptionSCRs 30V 800mASCRs 30V 800mASCRs 30V 800mA
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategorySCRsSCRsSCRs - Single
RoHSYN-
Series2N506X--
Breakover Current IBO Max10 A10 A-
Rated Repetitive Off State Voltage VDRM30 V30 V-
Off State Leakage Current @ VDRM IDRM10 uA10 uA-
Vf Forward Voltage1.7 V1.7 V-
Maximum Gate Peak Inverse Voltage5 V5 V-
Gate Trigger Voltage Vgt800 mV800 mV-
Gate Trigger Current Igt0.2 mA0.2 mA-
Holding Current Ih Max5 mA5 mA-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 110 C+ 110 C-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-92-3 (TO-226)TO-92-3 (TO-226)-
PackagingReelAmmo PackCut Tape (CT)
Current Rating510 mA510 mA-
Height5.33 mm5.33 mm-
Length5.2 mm5.2 mm-
TypeSCRSCR-
Width4.19 mm4.19 mm-
BrandON SemiconductorON Semiconductor-
Non Repetitive On State Current10 A10 A-
Product TypeSCRsSCRs-
Factory Pack Quantity20002000-
SubcategoryThyristorsThyristors-
Package Case--TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature---40°C ~ 110°C
Mounting Type--Through Hole
Supplier Device Package--TO-92-3
Current Hold Ih Max--5mA
Voltage Off State--30V
Voltage Gate Trigger Vgt Max--800mV
Current Gate Trigger Igt Max--200μA
Voltage On State Vtm Max--1.7V
Current On State It AV Max--510mA
Current On State It RMS Max--800mA
Current Off State Max--10μA
Current Non Rep# Surge 50 60Hz Itsm--10A @ 60Hz
SCR Type--Sensitive Gate
Manufacturer Part # Description RFQ
ON Semiconductor
ON Semiconductor
2N5060RLRAG SCRs 30V 800mA
2N5060RLRM SCRs 30V 800mA
2N5060RLRM THYRISTOR SCR 0.8A 30V TO-92
2N5060RLRAG SCRs 30V 800mA
2N5060RLRMG SCRs 30V 800mA
2N5060RL New and Original
2N5060RLRA SCRs 30V 800mA
2N5060RL1 Silicon Controlled Rectifier, 0.8A I(T)RMS, 510mA I(T), 30V V(DRM), 30V V(RRM), 1 Element, TO-92
Top