PartNumber | 2N5400 PBFREE | 2N5400 | 2N5400G |
Description | Bipolar Transistors - BJT PNP 130Vcbo 120Veo 5.0Vebo 625mW | Bipolar Transistors - BJT PNP Gen Pr Amp | Bipolar Transistors - BJT 500mA 130V PNP |
Manufacturer | Central Semiconductor | Central Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | T | Y |
Technology | Si | - | - |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-92-3 | TO-92-3 | TO-92-3 |
Transistor Polarity | PNP | PNP | PNP |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 120 V | 120 V | - 150 V |
Collector Base Voltage VCBO | 130 V | 130 V | - 160 V |
Emitter Base Voltage VEBO | 5 V | 5 V | 5 V |
Collector Emitter Saturation Voltage | 0.2 V | 0.5 V | - 0.5 V |
Gain Bandwidth Product fT | 400 MHz | 400 MHz | 400 MHz |
Minimum Operating Temperature | - 65 C | - 65 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | 2N54 | 2N5400 | - |
DC Current Gain hFE Max | 240 at 10 mA, 5 V | - | - |
Packaging | Bulk | Bulk | Bulk |
Brand | Central Semiconductor | Central Semiconductor | ON Semiconductor |
Continuous Collector Current | 600 mA | - 0.5 A | - 0.5 A |
DC Collector/Base Gain hfe Min | 40 at 10 mA, 5 V | 30 | 30 |
Pd Power Dissipation | 1.5 W | 625 mW | 225 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 2500 | 2500 | 5000 |
Subcategory | Transistors | Transistors | Transistors |
Maximum DC Collector Current | - | 0.6 A | 0.6 A |
Height | - | 5.33 mm | 5.33 mm |
Length | - | 5.21 mm | 5.2 mm |
Width | - | 4.19 mm | 4.19 mm |
Part # Aliases | - | 2N5400 TIN/LEAD | - |
Unit Weight | - | 0.016000 oz | - |