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| PartNumber | 2N5415 | 2N5415S | 2N5415UA |
| Description | Bipolar Transistors - BJT PNP High Voltage | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT |
| Manufacturer | Central Semiconductor | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | N | N |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-39-3 | TO-39-3 | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 200 V | 200 V | - |
| Collector Base Voltage VCBO | 200 V | 200 V | - |
| Emitter Base Voltage VEBO | 4 V | 6 V | - |
| Collector Emitter Saturation Voltage | 2.5 V | 2 V | - |
| Maximum DC Collector Current | 1 A | 1 A | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 200 C | - |
| Series | 2N5415 | - | - |
| Height | 6.6 mm | - | - |
| Length | 9.4 mm | - | - |
| Packaging | Bulk | Bulk | Waffle |
| Width | 9.4 mm | - | - |
| Brand | Central Semiconductor | Microchip / Microsemi | Microchip / Microsemi |
| DC Collector/Base Gain hfe Min | 30 | 30 at 50 mA, 10 V | - |
| Pd Power Dissipation | 1 W | 750 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 500 | 1 | 1 |
| Subcategory | Transistors | Transistors | Transistors |
| Part # Aliases | 2N5415 PBFREE | - | - |
| Technology | - | Si | - |
| DC Current Gain hFE Max | - | 120 at 50 mA, 10 V | - |