PartNumber | 2N5415 | 2N5415S | 2N5415UA |
Description | Bipolar Transistors - BJT PNP High Voltage | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT Power BJT |
Manufacturer | Central Semiconductor | Microchip | Microchip |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | N | N |
Mounting Style | Through Hole | Through Hole | - |
Package / Case | TO-39-3 | TO-39-3 | - |
Transistor Polarity | PNP | PNP | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 200 V | 200 V | - |
Collector Base Voltage VCBO | 200 V | 200 V | - |
Emitter Base Voltage VEBO | 4 V | 6 V | - |
Collector Emitter Saturation Voltage | 2.5 V | 2 V | - |
Maximum DC Collector Current | 1 A | 1 A | - |
Minimum Operating Temperature | - 65 C | - 65 C | - |
Maximum Operating Temperature | + 150 C | + 200 C | - |
Series | 2N5415 | - | - |
Height | 6.6 mm | - | - |
Length | 9.4 mm | - | - |
Packaging | Bulk | Bulk | Waffle |
Width | 9.4 mm | - | - |
Brand | Central Semiconductor | Microchip / Microsemi | Microchip / Microsemi |
DC Collector/Base Gain hfe Min | 30 | 30 at 50 mA, 10 V | - |
Pd Power Dissipation | 1 W | 750 mW | - |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 500 | 1 | 1 |
Subcategory | Transistors | Transistors | Transistors |
Part # Aliases | 2N5415 PBFREE | - | - |
Technology | - | Si | - |
DC Current Gain hFE Max | - | 120 at 50 mA, 10 V | - |