PartNumber | 2N5416 | 2N5416UA | 2N5416U4 |
Description | Bipolar Transistors - BJT PNP High Voltage | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT |
Manufacturer | Central Semiconductor | Microchip | Microchip |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | N | N |
Mounting Style | Through Hole | - | SMD/SMT |
Package / Case | TO-39-3 | - | SMD-0.22-3 |
Transistor Polarity | PNP | - | PNP |
Configuration | Single | - | Single |
Collector Emitter Voltage VCEO Max | 300 V | - | 80 V |
Collector Base Voltage VCBO | 350 V | - | 350 V |
Emitter Base Voltage VEBO | 6 V | - | 6 V |
Collector Emitter Saturation Voltage | 2 V | - | 2 V |
Maximum DC Collector Current | 1 A | - | 1 A |
Minimum Operating Temperature | - 65 C | - | - 65 C |
Maximum Operating Temperature | + 150 C | - | + 200 C |
Series | 2N5416 | - | - |
Height | 6.6 mm | - | - |
Length | 9.4 mm | - | - |
Packaging | Bulk | Waffle | Tray |
Width | 9.4 mm | - | - |
Brand | Central Semiconductor | Microchip / Microsemi | Microchip / Microsemi |
DC Collector/Base Gain hfe Min | 30 | - | 15 at 1 mA, 10 V |
Pd Power Dissipation | 1 W | - | 1 W |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 500 | 1 | 1 |
Subcategory | Transistors | Transistors | Transistors |
Part # Aliases | 2N5416 PBFREE | - | - |
Technology | - | - | Si |
DC Current Gain hFE Max | - | - | 120 at 50 mA, 10 V |