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| PartNumber | 2N5416 | 2N5416UA | 2N5416U4 |
| Description | Bipolar Transistors - BJT PNP High Voltage | Bipolar Transistors - BJT Power BJT | Bipolar Transistors - BJT |
| Manufacturer | Central Semiconductor | Microchip | Microchip |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | N | N |
| Mounting Style | Through Hole | - | SMD/SMT |
| Package / Case | TO-39-3 | - | SMD-0.22-3 |
| Transistor Polarity | PNP | - | PNP |
| Configuration | Single | - | Single |
| Collector Emitter Voltage VCEO Max | 300 V | - | 80 V |
| Collector Base Voltage VCBO | 350 V | - | 350 V |
| Emitter Base Voltage VEBO | 6 V | - | 6 V |
| Collector Emitter Saturation Voltage | 2 V | - | 2 V |
| Maximum DC Collector Current | 1 A | - | 1 A |
| Minimum Operating Temperature | - 65 C | - | - 65 C |
| Maximum Operating Temperature | + 150 C | - | + 200 C |
| Series | 2N5416 | - | - |
| Height | 6.6 mm | - | - |
| Length | 9.4 mm | - | - |
| Packaging | Bulk | Waffle | Tray |
| Width | 9.4 mm | - | - |
| Brand | Central Semiconductor | Microchip / Microsemi | Microchip / Microsemi |
| DC Collector/Base Gain hfe Min | 30 | - | 15 at 1 mA, 10 V |
| Pd Power Dissipation | 1 W | - | 1 W |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 500 | 1 | 1 |
| Subcategory | Transistors | Transistors | Transistors |
| Part # Aliases | 2N5416 PBFREE | - | - |
| Technology | - | - | Si |
| DC Current Gain hFE Max | - | - | 120 at 50 mA, 10 V |