PartNumber | 2N5550 | 2N5550TAR | 2N5550TA |
Description | Bipolar Transistors - BJT NPN Gen Pur SS | Bipolar Transistors - BJT NPN Si Transistor Epitaxial | Bipolar Transistors - BJT NPN Si Transistor Epitaxial |
Manufacturer | Central Semiconductor | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | Y | Y | Y |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-92-3 | TO-92-3 Kinked Lead | TO-92-3 Kinked Lead |
Transistor Polarity | NPN | NPN | NPN |
Configuration | Single | Single | Single |
Collector Emitter Voltage VCEO Max | 140 V | 140 V | 140 V |
Collector Base Voltage VCBO | 160 V | 160 V | 160 V |
Emitter Base Voltage VEBO | 6 V | 6 V | 6 V |
Collector Emitter Saturation Voltage | 0.25 V | 0.25 V | 0.25 V |
Maximum DC Collector Current | 0.6 A | 0.6 A | 0.6 A |
Gain Bandwidth Product fT | 300 MHz | 300 MHz | 300 MHz |
Minimum Operating Temperature | - 65 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | 2N5550 | 2N5550 | 2N5550 |
Height | 5.33 mm | 4.7 mm | 4.7 mm |
Length | 5.21 mm | 4.7 mm | 4.7 mm |
Packaging | Bulk | Ammo Pack | Ammo Pack |
Width | 4.19 mm | 3.93 mm | 3.93 mm |
Brand | Central Semiconductor | ON Semiconductor / Fairchild | ON Semiconductor / Fairchild |
Continuous Collector Current | 0.6 A | 0.6 A | 0.6 A |
DC Collector/Base Gain hfe Min | 60 at 1 mA, 5 V, 60 at 10 mA, 5 V, 20 at 50 mA, 5 V | 60 | 60 |
Pd Power Dissipation | 625 mW | 625 mW | 625 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 2500 | 2000 | 2000 |
Subcategory | Transistors | Transistors | Transistors |
Part # Aliases | 2N5550 PBFREE | 2N5550TAR_NL | - |
Unit Weight | 0.016000 oz | 0.008466 oz | 0.008466 oz |
DC Current Gain hFE Max | - | 250 | 250 |